Reflective type segmented electrooptical electric field sensor

Power-Frequency Electric Field Sensing Utilizing a Twin-FBG Fabry–Perot Interferometer and Polyimide Tubing with Space Charge as Field Sensing Element

“…In structure, most of previously developed EO sensors require two polarization maintaining fibers (PMF) connected to the device as input/output outlets of the probe light, which often causes the sensor in difficulty in installations as well as in reducing whole size. Recently, with developments of lithographic and micro/nano-machining technologies, a variety of state-of-the-art, light planar waveguide or glass fiber based EO sensors have been developed [17,18,19,20]. Among these new types of EO sensors, some already adopted the novel structures allowing to use a single fiber for probe light transmissions [18,19], which considerably reduced the whole size of the sensor.…”

“…Recently, with developments of lithographic and micro/nano-machining technologies, a variety of state-of-the-art, light planar waveguide or glass fiber based EO sensors have been developed [17,18,19,20]. Among these new types of EO sensors, some already adopted the novel structures allowing to use a single fiber for probe light transmissions [18,19], which considerably reduced the whole size of the sensor. However, a metallic dipole antenna (electrodes) to generate induction voltage to drive the device to work still was needed.…”

Electro-optic Electric Field Sensor Utilizing Ti:LiNbO3 Symmetric Mach-Zehnder Interferometers

“…Electric field sensors are widely used in the electromagnetic compatibility (EMC) technology area and their importance is growing with the progress of the mobile multimedia communication fields [1]. To evaluate the EMC it is necessary to accurately evaluate the strength and distribution of electromagnetic field surrounding the electronic equipment.…”

Electro-optic effect in GaN/Al0.15 Ga0.85N single quantum wells for optical switch

“…Recently, there has been a considerable interest in interband transitions (IBTs) in nitride semiconductor quantum well (QW) structures [10][11][12][13][14][15] the possibility of achieving both linear and nonlinear optical properties. Also, IBTs in nitride semiconductor QWs have been the subject of extensive researches for their extremely large oscillator strengths and relatively narrow line widths, and are used in a variety of optoelectronic devices like QW infrared lasers [16,17], switches and MQW electrooptical modulators [18]. Above all, nitride-semiconductor heterostructures have several advantages, namely: (1) the absorption recovery time is considerably lower than 1 ps, (2) a wide range of wavelengths is available with a less-complicated quantum structure, (3) the homogeneous line width is sufficiently broad due to the short dephasing time, (4) two-photon absorption does not interfere with the saturable absorption due to the wide band-gap [19,20].…”