Refractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple quantum-well (MQW) waveguides

Shim, Jong‐In; Yamaguchi, Masayuki; Delansay, P.; Kitamura, M.

doi:10.1109/2944.401223

Cited by 28 publications

(4 citation statements)

References 28 publications

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“…Furthermore, the epitaxial layers of the entire structure are laterally surrounded by a benzocyclobutene (BCB) dielectric confinement layer, and a 200 nm nitride (SiN x ) layer is inserted between them to improve adhesion. The refractive indexes of air, BCB, SiNx, active region, In 0.23 Ga 0.77 As and In 0.23 (Al 0.5 Ga 0.5 ) 0.77 As are set to be 1.0, 1.54 2.0, 3.40, 3.39 and 3.18 [27][28][29][30], respectively. In addition, the boundary conditions in the simulation are set to a perfectly matched layer (PML) and the maximum mesh steps are all set to be 0.02 µm.…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Yang¹,

Wang²,

Zhu³

et al. 2021

Laser Phys.

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We optimize the structure of a silicon-based InAs/InGaAs quantum dot square microcavity laser with an output waveguide structure. By designing a new laser structure, the emission wavelength is extended to 1550 nm. We investigate the structure parameters that affect the quality factor and optical mode of the square microcavity, including the side length of the microcavity, the width of the output waveguide, the cladding layer thickness and the etching depth. By connecting the output waveguide at the edge-midpoint of the square microcavity, both the unidirectional emission and mode selectivity can be obtained, which avoids mode competition. The 1550 nm wavelength single-mode laser is beneficial and has reat significance for the development of silicon-based optoelectronic integration.

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Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Yang¹,

Wang²,

Zhu³

et al. 2021

Laser Phys.

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“…Either the wave-guiding core layer made of InGaAsP of band gap at 1.15 μm (1.15Q) or the QWs absorb the control light and the generated free carriers impart a phase change onto the signal light primarily from the plasma dispersion effect [45]. In multiple QWs, the phase modulation effect is enhanced due to the step-like density of states [45] and the modulation depth is relatively independent of modulator length since the phase change is proportional to the number of carriers. For example, in the waveguide with the 1.15Q waveguide core without QWs, the 1060-nm light has a penetration depth of only several micrometers before it is completely absorbed.…”

Section: Inp Modulation Structures For Oawgmentioning

confidence: 99%

“…The control light is injected into the waveguide by one of many available coupling techniques including end-fire, butt coupling, or evanescent coupling [44]. Either the wave-guiding core layer made of InGaAsP of band gap at 1.15 μm (1.15Q) or the QWs absorb the control light and the generated free carriers impart a phase change onto the signal light primarily from the plasma dispersion effect [45]. In multiple QWs, the phase modulation effect is enhanced due to the step-like density of states [45] and the modulation depth is relatively independent of modulator length since the phase change is proportional to the number of carriers.…”

Section: Inp Modulation Structures For Oawgmentioning

confidence: 99%

Dynamic optical arbitrary waveform generation and detection in InP photonic integrated circuits for Tb/s optical communications

Fontaine

Scott

Yoo

2011

Optics Communications

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“…Sakata et al reduced the optical losses through the tuning region by confining the holes in quantum wells [4]. Shim et al described how to calculate the change in the refractive index and in the absorption in a type I MQW [5]. In this paper, we investigate how the tuning can be improved by employing a type II superlattice as the tuning region.…”

Section: Introductionmentioning

confidence: 99%

Tunable laser diodes with type II superlattice in the tuning region

Neber

Amann

1998

Semicond. Sci. Technol.

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Type II superlattices as tuning regions in continuously tunable laser diodes are investigated. They are used to create an artificial indirect semiconductor by spatially separating electrons and holes from each other. At a given current the mean electron density is increased and therefore a larger tuning range and efficiency are achieved. The type II superlattice can be prepared in different ways, e.g. by a superlattice consisting of two different semiconductors, by a doping superlattice, by alternately strained layers or by combining these effects. In the case of a tuning region with 1.3 µm bandgap wavelength lattice matched to an InP substrate, one may use an unstrained InGaAsP/InGaAsSb superlattice with an estimated band offset of 302 meV. This enhances the tuning by a factor of 160 in the low-current limit. At high tuning currents this factor decreases, but it is still considerable.

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Refractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple quantum-well (MQW) waveguides

Cited by 28 publications

References 28 publications

Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Dynamic optical arbitrary waveform generation and detection in InP photonic integrated circuits for Tb/s optical communications

Tunable laser diodes with type II superlattice in the tuning region

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