Refractive index determination of SiO₂ layer in the UV/Vis/NIR range: spectrophotometric reverse engineering on single and bi-layer designs

Abstract

In this paper we use spectrophotometric measurements and a Clustering Global Optimization procedure to determine the complex refractive index of SiO 2 layer from 250 nm to 1250 nm. A special commercial optical module allows the reflection and transmission measurements to be made under exactly the same illumination and measurement conditions. We compare the index determination results obtained from two different single layer SiO 2 samples, with high and low index glass substrates, respectively. We then determine the refractive index of SiO 2 for a bi-layer design in which the first deposited layer is Ta 2 O 5 . The corresponding solutions are discussed and we show that the real part of the complex refractive index obtained for a bi-layer is slightly different to that found for a single layer investigation. When SiO 2 is included inside a thin film stack, we propose the use of an index determination method in which a bi-layer is used for the real part of the complex refractive index, and single layer determination is used for the imaginary part of the refractive index in the UV range.

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example

“…A 3D parameter plot of NP-GaN as a comparison with other photonic materials. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] The NP-GaN system introduces a new material tunability in photonic engineering among high quality and electrically desirable material systems as signified in the light blue cubic region. ASSOCIATED CONTENT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 HUbp_eZukcfeYFAIiH9s74DklA&e= .…”

Calculation of reflectivity spectra for semi-infinite two-dimensional photonic crystals

“…Here, models were established to calculate the reflection spectra for air holes in surrounding media of each material for the TM mode with N ¼ 15, and wavelength-dependent dielectric functions were implemented. 50,51 Figures 8(a) and 8(b) show the results of varying P for each material. As was the case for air holes in GaAs, λ peak , the wavelength of the reflection peak is redshifted for increasing P. A comparison between the peak shifts for each material is shown in Fig.…”

Reflectance difference microscopy for nanometre thickness microstructure measurements

“…The material of microstructure is isotropic SiO 2 with refractive index reported in Gao et al . (). Isotropic Si is selected as the substrate and its refractive index is from Jellison ().…”