Refractive Index of ZnSe, ZnTe, and CdTe

Abstract:We investigate light emission from ZnTe-based microcavities containing CdTe quantum dots (QDs), with 2D (planar cavity) and 0D (pillar cavities) photonic confinement. The angular distribution from the planar cavity is presented as well as 2D cross-sections of the far field distribution of radiation from the micropillars. The efficient and desirable modification of the isotropic radiation of the QDs is shown for such structures. The diffraction observed is found to be inherent for such experiments with large numerical aperture of the lens and small diameters of the investigated pillars. This diffraction is successfully modeled. PACS (

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“…The value of refractive index obtained from the fit, = 3 12, is consistent with available literature data for ZnTe ( = 3 05) [8]. …”

Section: Emission Of a Planar Microcavitysupporting

confidence: 74%

Far field emission of micropillar and planar microcavities lattice-matched to ZnTe

Jakubczyk

Pacuski²,

Duch

et al. 2011

Open Physics

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“…The high frequency dieleetrie eonstant of bulk MgTe has been found to be 3.7 (12], in contrast to 7.2 for CdTe and 5.9 for ZnSe [16].…”

Section: Resuits and Discussionmentioning

confidence: 99%

Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

Waag

Heinke

Scholl

et al. 1993

Journal of Crystal Growth

123

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We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd l ~xMg,Tc by mokcular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cdl_,MgxTe epilayers were grown with a Mg conccntration hetween 0 and 68'1(, wh ich corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7'k. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the ralher good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.

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“…To compute the coherence length, L c , for SHG in reflection in ZnSe, we used the dispersion formula proposed by Marple. [17] Its evolution versus the excitation wavelength is plotted in Figure 5a. Notably, in the studied spectral range, L c is very small -about λ/20.…”

Section: Second-harmonic Generationmentioning

confidence: 99%

Second‐Harmonic and Terahertz Generation in a Prussian‐Blue Analogue

et al. 2017

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Second-harmonic and terahertz generation is performed in the Rb 0.94 Mn[Fe(CN) 6 ] 0.98 ·0.3H 2 O Prussian-blue analogue. Second-harmonic generation experiments are carried out between 1100 and 1700 nm and within the hysteresis loop of this compound. In the low-and high-temperature phases, our measurements indicate that the effective second-order nonlinear component (2) of this material is small, compared with α-quartz. However, in the high-temperature phase and

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Refractive Index of ZnSe, ZnTe, and CdTe

Cited by 474 publications

References 8 publications

Far field emission of micropillar and planar microcavities lattice-matched to ZnTe

Far field emission of micropillar and planar microcavities lattice-matched to ZnTe

Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

Second‐Harmonic and Terahertz Generation in a Prussian‐Blue Analogue

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