Refractive indices of ZnSiN2 on r-plane sapphire

Abstract

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Electronic and lattice dynamical properties of II‐IV‐N2 semiconductors

“…Among these, ZnGeN 2 and ZnSiN 2 and alloys of ZnSi x Ge 1−x N 2 were grown in thin film form (mostly on sapphire substrates) by a few different approaches, ranging from Cl based vapor growth [3], metalorganic chemical vapor deposition (MOCVD) [8,9], remote plasma MOCVD [10,11,12], RF-sputtering [13] at high pressure by Endo et al [2] and polycrystalline as well as small single crystals were grown by Du et al [14]. Raman spectra were measured by Viennois et al [15] on polycrystalline powders and on small single crystal needles by Peshek et al [16] Optical absorption [17], index of refraction [18], infrared reflectivity [19], magnetic properties upon Mn doping [20], and fabrication of transistors on SiC [21] were investigated for the Zn(Si,Ge)N 2 films obtained produced by Zhu et al [8]. Band structure calculations at the local density approximation (LDA) level were carried out by Limpijumnong et al [22] Misaki et al [23], Shaposhnikov et al [24] and Paudel [25] for a number of these materials but leave considerable uncertainty on the band gaps because of the shortcomings of the LDA.…”

Quasiparticle band structure of Zn-IV-N2compounds

“…The same group also reported ZnSiN 2 growth and alloy growth of ZnSi 1−x Ge x N 2 growth and these materials were investigated by a number of other collaborators determining optical properties 6,7 , transistor devices on SiC 8 , and even their suitability as magnetic semiconductor host by implantation of Mn 9 . Muth et al 6 determined band gaps from optical absorption data as a function of alloy composition in ZnSi 1−x Ge x N 2 and found it to vary between 3.1-3.2 eV for ZnGeN 2 to 4.4 eV in ZnSiN 2 .…”

“…Muth et al 6 determined band gaps from optical absorption data as a function of alloy composition in ZnSi 1−x Ge x N 2 and found it to vary between 3.1-3.2 eV for ZnGeN 2 to 4.4 eV in ZnSiN 2 . Cook et al 7 determined the indices of refraction and Mintairov et al 10 determined the infrared reflection relating to the vibrational spectrum.…”

Optical Properties of II-IV-N2 Semiconductors

“…1,2 These studies revealed that ZnGeN 2 is expected to have a direct gap, while ZnSiN 2 is expected to have an indirect band gap. Furthermore, rather than acting as a biaxial crystal as one might suspect from the orthorhombic symmetry, calculations 1 and experiment 9 and have shown the crystal refractive index to have a uniaxial nature. 2 Potentially this matches well with lattice constants of GaN where a=3.189 Å, c= 5.185 Å, and 4H SiC where a=3.073 Å and c=10.53 Å.…”