Refurbishment of W/B₄C multilayers on Si substrate by etching a chromium buffer layer

Abstract

In synchrotron facilities, optics with multilayer coatings are used for beam monochromatization, focusing, and collimation. These coatings might be damaged by high heat load, poor film adhesion, high internal stress, or poor vacuum. Optical substrates always need high quality, which is expensive and has a long processing cycle. Therefore, it is desired to make the substrate reusable and the refurbished coating as good as a brand-new one. In this study, a W/B4C multilayer coating with a 2 nm Cr buffer layer was prepared on a Si substrate. The coating was successfully stripped from the Si substrate by dissolving the Cr buffer layer using an etchant. The roughness and morphology after the different etching times were investigated by measuring the GIXRR and 3D surface profiler. It is shown that the time required to etch the W/B4C multilayer coating with a Cr buffer layer, is quite different compared with etching a single Cr film. A layer of silicon dioxide was introduced during the fitting. After the new etching process, the roughness of the sample is as good as the one on a brand-new substrate. The W/B4C multilayer coatings with a Cr buffer layer were recoated on the etched samples, and the interface roughness was not damaged by the etching process.