Regimes of piezoelectric transformer operation

Kartashev, I. I.; Vontz, T.; Florian, H

doi:10.1088/0957-0233/20/4/049801

Cited by 5 publications

(6 citation statements)

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“…The R L 's (and % efficiency) that correspond to a peak in efficiency are 240 (58%), 100 (50%), 70 (59%), and 40 (32%) for the n = 3, 5, 9, and 13 mode devices, respectively. This decrease in R L at peak device efficiency with mode number trend is consistent with the predicted loads that correspond to peak efficiency as described earlier in (10). The output capacitance increases with increasing n and, therefore, the R L corresponding to a peak in efficiency decreases.…”

Section: Two Port Measurementssupporting

confidence: 89%

“…It is noteworthy that when the R L magnitude corresponds to peak power delivered to the load, a 50% transformer efficiency results. Further details on this can be found in [4], [9], [10]. For maximum performance, the operation frequency is at or near circuit resonance, ω max , and is slightly larger than the mechanical resonance in (3) Operation at the mechanical resonance, ω r , will result in poorer piezoelectric transformer performance as detailed in [4].…”

Section: Piezoelectric Transformer Analytical Modeling a Equivalmentioning

confidence: 99%

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Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Bedair

Pulskamp

Polcawich

et al. 2013

J. Microelectromech. Syst.

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This paper reports the performance of leadzirconate-titanate (PZT)-on-silicon electromechanical resonators as thin-film piezoelectric transformers. The PZT-on-silicon resonators rely on the odd harmonics of the contour lengthextensional modes to provide a convenient means for voltage and current transformations with a single layer of piezoelectric PZT. The resistive-load-dependent voltage gains and efficiencies are derived along with the peak efficiencies and open circuit voltage gains. The models of efficiency and voltage gain are compared to the experimental measurements of fabricated PZTon-silicon piezoelectric transformers with 2, 4, and 10 μm of device silicon. The resonant frequencies of the devices range between 14 and 19 MHz. Peak efficiencies as high as 62% are measured and open circuit voltage gains as high as 5.7 are extracted from the measurements. The measured efficiencies with 50-loads compare within 14% of the models on average (25% peak error). The extracted open-circuit voltage gains and their models compare within 22% on average (67% peak error). The trade between the load-dependent efficiencies and voltage gains are also presented for the n =3, 5, 9, and 13 harmonics. [2012-0339]

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Section: Two Port Measurementssupporting

confidence: 89%

Section: Piezoelectric Transformer Analytical Modeling a Equivalmentioning

confidence: 99%

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Bedair

Pulskamp

Polcawich

et al. 2013

J. Microelectromech. Syst.

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“…Introduction: Compared with traditional electromagnetic transformers, piezoelectric transformers (PTs) possess a high potential to meet the requirements of next-generation transformers owing to their desirable advantages such as miniaturisation, high power density, electromagnetic immunity and good isolation [1,2]. However, severe rise of working temperature due to the heat generation from internal energy losses restricts them only to high-voltage and low-power fields [3,4].…”

mentioning

confidence: 99%

Polypropylene membrane decreases contact wear of piezoelectric transformer with heat transfer structure

Shao

Pan

et al. 2013

Electron. lett.

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A new design is presented to decrease the contact wear between a piezoelectric transformer and its heat transfer structure by inserting a layer of polypropylene membrane between them. Without significant degradation of performance, the wear problem is well suppressed with notable extension of working life. Compared with the former wear rate of 2.72% per day on the electrodes in the first 2.5 working days, the wear rate with polypropylene membrane is decreased to only 0.03% per day within an accumulated working time of 110 days. Moreover, with the insulating layer, structure design and package become more flexible as the metal electrodes and radiator are isolated.

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“…Instead of the input and output halves being made of bulk piezoelectric material, they are instead made of layers of piezoelectric ceramic with a thin metal conductor sandwiched between them. The first benefit to this is that it increases the total surface area and volume of piezoelectric ceramic, allowing more charge accumulation and consequently, higher voltages to be achieved [12]. The second advantage to multilayer construction is the improved thermal conductivity, which if poor, leads to detrimental effects on PT performance [16].…”

Section: Figure 10: a Rosen-type Piezoelectric Transformermentioning

confidence: 99%

Implementing a Piezoelectric Transformer for a Ferroelectric Phase Shifter Circuit

Roberts

2012

Integrated Ferroelectrics

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For all this work and everything wonderful it has brought into my life, I owe Dr. Bob Romanofsky a debt of gratitude I can never repay. As a mentor he has given me invaluable guidance on research, my career, and life. His own work and accomplishments are an inspiration and motivate me to continue learning and always seek out new opportunities. I am grateful for his friendship, because as long as I "love NASA and the space program and humanity" he'll always be in my corner. There is no greater comfort that the love of my parents and that they have been, and will be, there for me. My achievements are their achievements. Many thanks to the staff of NASA Glenn whose technical help and company I have come to appreciate so much. Many thanks to

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Regimes of piezoelectric transformer operation

Abstract: The equations for the output power in table 1 contained an error. The product of frequency and output capacitance belongs to the numerator rather than the denominator. The corrected equations are provided in the PDF file.

Cited by 5 publications

References 0 publications

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Polypropylene membrane decreases contact wear of piezoelectric transformer with heat transfer structure

Implementing a Piezoelectric Transformer for a Ferroelectric Phase Shifter Circuit

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