Régimes transitoires des photopiles : durée de vie des porteurs et vitesse de recombinaison

Mialhe, P.; Sissoko, G.; Pelanchon, F.; Salagnon, J. M.

doi:10.1051/jp3:1992112

Cited by 4 publications

(2 citation statements)

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“…To perform the simulation with Matlab Simulink, the bifacial cell in the experimental setup has been replaced by an equivalent electrical circuit (Mialhe, et al, 1992(Mialhe, et al, , pp 2317, (Barro, et al, 2004) and the influence of the magnetic field on the transient photocurrent has been studied. This equivalent electrical circuit includes the photocurrent source (Colomb, et al, 1992), the device depletion capacitance, the inductance, the series resistance Rs α , and the shunt resistance Rsh α .…”

Section: Introductionmentioning

confidence: 99%

Renoval Charge Technic Applied To A Bifacial Solar Cell Under Constant Magnetic Field

Mbodji¹,

Maiga²,

Dieng³

et al. 2009

Glo Jnl Pure Appl Sci

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An n + -p-p + bifacial solar cell under constant magnetic field is placed in a fast-switch-interrupted circuit and submitted to a constant multi-spectral illumination. The transient decay occurs between two steady states through operating points depending on two variable resistors; this allows us to obtain a transient decay at any operating point of the I-V curve of the solar cell, from the short circuit to the open one. The influence of magnetic field on the transient photocurrent has been studied using Matlab Simulink simulations. These simulations lead to an equivalent circuit of the bifacial cell in transient state assuming that the photocurrent is the diffused. PACS: 73.50.Pz

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Section: Introductionmentioning

confidence: 99%

Renoval Charge Technic Applied To A Bifacial Solar Cell Under Constant Magnetic Field

Mbodji¹,

Maiga²,

Dieng³

et al. 2009

Glo Jnl Pure Appl Sci

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“…Then, an improvement of the short circuit current decay method has been suggested [12] with operating cells at constant illumination level and no power supply requirement. This experimental procedure has been discussed and applied to commercial cells under normal operating conditions [12,13]. The …”

Section: Introductionmentioning

confidence: 99%

Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity

Affour

Mialhe

1996

Active and Passive Electronic Components

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The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (x) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values of "r and S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.

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Determination of Thermophysical Parameters by Thermal Transient Phenomena

Bah¹,

Adj²,

Azilinon³

et al. 2000

World Renewable Energy Congress VI

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Régimes transitoires des photopiles : durée de vie des porteurs et vitesse de recombinaison

Cited by 4 publications

References 0 publications

Renoval Charge Technic Applied To A Bifacial Solar Cell Under Constant Magnetic Field

Renoval Charge Technic Applied To A Bifacial Solar Cell Under Constant Magnetic Field

Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity

Determination of Thermophysical Parameters by Thermal Transient Phenomena

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