user and the environment in order to avoid any dangerous contact between the robot and the unwanted objects or obstacles. Currently several proximity sensors have been reported with sensing mechanisms relying on optical imaging, [2] ultrasound, [1b] triboelectric effect, [3] and change in capacitance. [4] The maximum sensing distance is a basic consideration for design of these proximity sensors. A large sensing distance usually means long response time for a robot to avoid unexpected collisions and consequent damage. The maximum sensing distance for capacitance-, triboelectric-, and ultrasound-type sensors can reach up to several tens of centimeters, [1b,3,4c,e] while it is only about 3 cm for electret-type sensors. [5] It is also noted that, when triboelectric effect was integrated with a p-type silicon-based field effect transistor (FET), the effective sensing distance was only about 80 µm. [6] Recently Wang et al. developed flexible proximity sensors based on organic crystal sheets. [7] Organic semiconductor rubrene nanobelts were synthesized by physical vapor transport method and then mechanically transferred to flexible poly(ethylene terephthalate) substrates to construct two-terminal devices. Such devices could perceive the approach of human finger, fiber, and even atomic force microscopy tip. However, their reported sensing distance is limited only to several millimeters, and the fabrication process of such devices is also expected to be further simplified. Since the appealing route for the fabrication of organic semiconducting films and related devices is usually solution based, including spin coating, [8] dip coating, [9] push coating, [10] solution shearing, [11] printing, [12] and so on, solution fabrication of organic semiconductor-based proximity sensors is highly expected.Here we reported the solution-based fabrication of organic semiconductor-based proximity sensors designed with FET configuration. Organic semiconducting poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b] thiophene)] (DPP-DTT) was used as the active layer which was deposited by the conventional spin-coating technique. Extended gate electrode was used as the sensing element. DPP-DTT has been widely studied in organic FET devices with high carrier mobility and good air stability. [13] Several reports have shown that mobility of DPP-DTT based FET devices was significantly In recent years human-machine interaction has become increasingly important in industrial applications and daily life. Proximity sensors are expected to become an important part of such systems. The mechanisms of these sensors are usually based on ultrasound, capacitance, triboelectric effect, optical imaging or semiconducting devices. The fabrication and sensing performance of solution-based organic transistor proximity sensors is reported. To enhance electrical performance, nanogroove templates are introduced to guide the oriented growth of organic semiconducting layer. The templates are realized by friction-transferri...