2022
DOI: 10.1039/d2ra04820e
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Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector

Abstract: A facile method of regulating interface Schottky barriers is used for self-powered photodetectors. Benefitting from the excellent built-in electrical potential, the detector can exhibit high-fidelity imaging capability.

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Cited by 6 publications
(2 citation statements)
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References 69 publications
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“…The Ag electrodes on the n-Si show Schottky behavior as the work function of Ag is greater than the work function of the n-Si semiconductor. 44 The bare n-Si-based device (Fig. S1(b), ESI †) performance was measured under different wavelengths at 250 mV applied bias under different laser light illuminations of 385, 532, and 1064 nm (Fig.…”
Section: Paper Materials Advancesmentioning
confidence: 99%
“…The Ag electrodes on the n-Si show Schottky behavior as the work function of Ag is greater than the work function of the n-Si semiconductor. 44 The bare n-Si-based device (Fig. S1(b), ESI †) performance was measured under different wavelengths at 250 mV applied bias under different laser light illuminations of 385, 532, and 1064 nm (Fig.…”
Section: Paper Materials Advancesmentioning
confidence: 99%
“…These pairs are separated at the Schottky barrier so that the electrons and holes are directed to opposite contacts [9]. This separation creates a photocurrent which is used in various applications including imaging, optical communications, sensing and spectroscopy [10][11][12]. Their fast response time and low capacitance make Schottky photodetectors well suited for the above-mentioned applications requiring high frequencies [13].…”
Section: Introductionmentioning
confidence: 99%