2022
DOI: 10.3390/ma15196916
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Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

Abstract: A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (VGa). Different correlations between technological parameters and VGa concentration were observed for layers grown from triethyl gallium (TEGa) and trimethy… Show more

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Cited by 4 publications
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“…First, contamination is enhanced in a hydrogen atmosphere for all studied contaminants, except hydrogen itself. Increased contamination of GaN layers in the hydrogen atmosphere is in agreement with refs , . Second, concentration of all studied contaminants is higher in HDD samples with exception of silicon contamination, which seems to be independent of dislocation density.…”
Section: Resultssupporting
confidence: 89%
“…First, contamination is enhanced in a hydrogen atmosphere for all studied contaminants, except hydrogen itself. Increased contamination of GaN layers in the hydrogen atmosphere is in agreement with refs , . Second, concentration of all studied contaminants is higher in HDD samples with exception of silicon contamination, which seems to be independent of dislocation density.…”
Section: Resultssupporting
confidence: 89%