Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth

Takano, Kazufumi; Kitagawa, Kazuo; Lino, E.; Kimura, M.; Yamagishi, Hiroshi

doi:10.4028/www.scientific.net/msf.196-201.1707

Cited by 8 publications

(13 citation statements)

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“…The final metric is the so-called nucleation temperature, which is the temperature at which visible voids are suddenly formed during crystal growth. Many experiments [12][13][14]41,42] have shown that the measurable void size distribution suddenly begins to evolve once a crystal segment has cooled to about 1100 1C and then evolves for a short time until all mobile species have been incorporated into stable clusters. There is wide consensus that the nucleation and growth temperature interval, which somewhat depends on the cooling conditions during growth, is in the range 1050-1110 1C.…”

Section: Resultsmentioning

confidence: 99%

“…Itsumi et al [10] were the first to employ transmission electron microscopy (TEM) on copper-decorated wafer samples to identify the structure of COPs as octahedral voids faceted along (1 1 1) planes with sizes ranging from 100 to 300 nm. Numerous studies were subsequently performed to characterize the response of the void size distribution to changes in the crystal growth conditions and it has been demonstrated that the temperature interval between about 1050 and 1100 1C is mainly responsible for setting the final size distribution of voids during crystal growth [11][12][13][14].…”

Section: Experimental and Theoretical Characterization Of Void Formatmentioning

confidence: 99%

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A microscopically accurate continuum model for void formation during semiconductor silicon processing

Frewen

Kapur

Haeckl

et al. 2005

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Section: Experimental and Theoretical Characterization Of Void Formatmentioning

confidence: 99%

A microscopically accurate continuum model for void formation during semiconductor silicon processing

Frewen

Kapur

Haeckl

et al. 2005

Journal of Crystal Growth

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“…The presence of large concentrations of oxygen in commercial CZ silicon made many investigators skeptical of this interpretation of defect types, such as the crystal-originated particles (COPs) and lightscattering tomography-detected particles (LSTDs) seen inside the OSF-ring in CZ-grown silicon. [7][8][9][10][11][12] Recent transmission electron microscopy (TEM) analysis 13,14 of asgrown microdefects inside the OSF-ring proved this link by identifying COPs and LSTDs as voids that are only partially full of oxide.…”

mentioning

confidence: 99%

“…Independently, the voids play an important role in device performance. Numerous studies 7,10,15 have coupled the gate oxide integrity (GOI) of metal oxide semiconductor (MOS) devices to the density of COPs and LSTDs. We use experimental results of one of these studies in our analysis.…”

mentioning

confidence: 99%

“…Because of their importance, much recent engineering has gone into understanding the coupling between the S0013-4651(98)07-034-7 CCC: $7.00 © The Electrochemical Society, Inc. number and size distributions of COPs and LSTDs and operating conditions during crystal growth. 10,[16][17][18][19] A large body of recent empirical data suggests several facts. Most important, the size distribution and number density of these defects shows that void formation is correlated with the cooling rate of the crystal, defined as the time rate-of-change of the temperature of a crystal element within a critical temperature range usually associated with the rapid nucleation and growth of these vacancy precipitates.…”

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confidence: 99%

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Modeling Microdefect Formation in Czochralski Silicon

Sinno

Brown

1999

J. Electrochem. Soc.

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An internally consistent model is presented for the dynamic formation of microdefects in single‐crystal silicon. The model is built on the dynamics of point defects, vacancies and self‐interstitials, and is extended to include the growth of clusters of these point defects into microdefects. A hybrid finite‐element/finite‐difference numerical method is used to solve the coupled system of partial differential equations, which includes sets of discrete rate equations for small clusters and Fokker‐Planck equations for larger ones. As described previously by a point defect dynamics model [J. Electrochem. Soc., 145, 303 (1998)], the oxidation‐induced stacking fault (OSF)‐ring position delineates the vacancy‐rich region inside from the external interstitial‐rich crystal. In Czochralski silicon, the radial position of the OSF‐ring correlates well with the expression V/G false(ROSFfalse)=1.34×10−3 cm2 min−1 K−1 . Simulations are used to explore the formation of voids in the vacancy‐rich region inside the OSF‐ring. Predictions of the total concentration of observable voids and the dependence of this concentration on the cooling rate agree with experiments and point to the importance of the axial temperature profile in the crystal from the melting point (1685 K) down to about 1150 K in setting the number and size of voids. The total number of voids correlates with V 〈G〉 where 〈G〉 is a measure of the temperature gradient in the temperature range 1173 K ≤ T ≤ 1685 K. The appearance of the OSF‐ring is explained qualitatively in terms of the residual vacancy concentration remaining in the crystal after aggregation has ceased. © 1999 The Electrochemical Society. All rights reserved.

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Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Hourai

Nagashima

Nishikawa

et al. 2018

Physica Status Solidi (a)

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Development of point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology by v/G control, i.e., the ratio of growth rate (v) to the axial temperature gradient (G) in the crystal near its melting point, is reviewed and nitrogen‐ and hydrogen‐doping technologies are proposed for 300‐mm magnetic‐field‐applied CZ‐Si (MCZ‐Si) crystals free of grown‐in defects with very low oxygen for application to future silicon power devices such as insulated gate bipolar transistors (IGBTs). Using a hot zone with a uniform G distribution in a crystal radial direction, v/G is maintained by controlling v of around the critical value at which the amount of vacancies is balanced with that of self‐interstitials so that the generation of grown‐in defects, such as voids and dislocation clusters, are suppressed. Nitrogen‐doping or hydrogen‐doping technology combined with v/G control also enables the enlarging of the process window for grown‐in defect‐free MCZ‐Si crystals that can be used as an alternative material to floating zone‐Si crystals. The advantages and disadvantages of both technologies are discussed from the view point of crystal quality required to guarantee higher performance of future IGBTs.

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Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth

Cited by 8 publications

References 0 publications

A microscopically accurate continuum model for void formation during semiconductor silicon processing

A microscopically accurate continuum model for void formation during semiconductor silicon processing

Modeling Microdefect Formation in Czochralski Silicon

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

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