Relationship between porous silicon formation and hydrogen incorporation

Allongue, P.; Villeneuve, Catherine Henry de; Bernard, M.; Péou, J.E; Boutry‐Forveille, A.; Lévy‐Clément, C.

doi:10.1016/s0040-6090(96)09365-0

Cited by 28 publications

(19 citation statements)

References 19 publications

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“…71,72 The atomic ratio H/Si in PSi has been determined using secondary ion mass spectrometry (SIMS) 73 and Elastic Recoil Detection Analysis (ERDA), and in freshly anodized samples it is as high as 0.1 to 0.6, depending on the porosity and surface area of the samples. By an in situ potential-modulated Fourier Transform IR (FTIR) experiment, Venkateswara Rao et al 74 have shown the presence of SiH x (x = 1, 2, 3) groups.…”

Section: Chemical Compositionmentioning

confidence: 99%

“…Of course, the depth at which this occurs will be dependent on current density and HF concentration. 72 However, without any doubt, low temperature and low growth rate will favor formation of deep uniform pores.…”

Section: Influence Of Etching Timementioning

confidence: 99%

“…Therefore, due to the large tendency to branch, it is difficult to produce straight Downloaded by [Stanford University Libraries] at 04: 49 11 October 2012 perpendicular pores with smooth walls on (110) and (111) samples, even on surface patterned samples. 72 (v) Pore diameters of the PSi layer formed under a given set of conditions can have different distributions. Normal, log-normal, bimodal, fractal, and non-uniform distributions have been found for PSi.…”

Section: Influence Of Anodization Parameters On Microstructure Of Psimentioning

confidence: 99%

See 2 more Smart Citations

Silicon Porosification: State of the Art

Korotcenkov

Cho

2010

Critical Reviews in Solid State and Materials Sciences

152

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Section: Chemical Compositionmentioning

confidence: 99%

Section: Influence Of Etching Timementioning

confidence: 99%

Section: Influence Of Anodization Parameters On Microstructure Of Psimentioning

confidence: 99%

See 1 more Smart Citation

Silicon Porosification: State of the Art

Korotcenkov

Cho

2010

Critical Reviews in Solid State and Materials Sciences

152

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“…The current density shows a double peak structure at lower concentrations of NH 4 F. The current density increases and the double peak structure diminishes with increasing NH 4 F concentration until the first peak has vanished and a plateau is reached at higher anodic potentials in 1 M NH 4 F (pH 3.7). Simultaneously, the current becomes noisy due to heavy H 2 -gas evolution [1,35,36,49] which diffuses into the c-Si bulk [50,51]. Etching of Si and finally pore formation occur before the maximum of the first current peak is reached.…”

Section: Resultsmentioning

confidence: 99%

Initial stages of porous silicon formation: An in‐situ investigation of the electronic properties and surface morphology

Rappich

2004

phys. stat. sol. (c)

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In-situ photovoltage (PV) and photoluminescence (PL) are used to obtain information about the band bending of Si and the PL quenching by nonradiative (nr) surface recombination during the beginning of electrochemical etching of silicon in aqueous fluoride solutions. The onset of the porous silicon formation in diluted NH 4 F solution is accompanied by an increase of nr surface recombination, by a development of positive charged surface states and by a strong increase of the current density. The evolution of hydrogen and its penetration into near surface regions lead at first to the passivation and with ongoing time to the formation of nr surface defects. The lowest rate of nr surface recombination has been observed in highly concentrated HF solution just in the beginning of the electrochemical etching process. Therefore, intermediates of these reactions are rather of ionic nature than like Si dangling bonds. Scanning electron microscopy reveal the slight roughening of the Si surface and infrared spectroscopy confirm that these surfaces are always hydrogenated.

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“…Evidence for the passivation of pore walls by Si-H bond formation was provided by studies in solutions containing D 2 O [191]. The etching rate was found to be directly correlated to the concentration of oxide sites for film growth [192].…”

Section: Porous Structurementioning

confidence: 99%

Electrochemistry of metals and semiconductors in fluoride media

Noel

Suryanarayanan

2005

J Appl Electrochem

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The electrochemical surface transformations and diverse applications of a variety of metals and semiconductors in a wide range of fluoride media such as aqueous, non-aqueous media, liquid HF media, room temperature fluoride melts and molten fluoride media with a melting range covering 50-1000°C are reviewed. Nickel shows excellent corrosion resistance in the absence of water. The anodic performance of this metal in electrochemical perfluorination and NF 3 production is discussed. Compact carbon materials serve as anodes in fluorine generators. In high temperature melts, they perform as consumable anodes. Graphitic carbon undergoes intercalation/ de-intercalation process and related battery applications. Cu/CuF 2 couple is a good reference electrode. Pt and vitreous carbon materials are the inert electrodes of choice for electro analytical applications. Electrodeposition of Lithium as a non-dendritic uniform phase is important in Lithium metal based secondary batteries. High temperature fluoride melts are used in electro-deposition of valve metals such as Nb, Ta, and Ti. The stability and decomposition of fluoride complexes in these media are of interest.

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Relationship between porous silicon formation and hydrogen incorporation

Cited by 28 publications

References 19 publications

Silicon Porosification: State of the Art

Silicon Porosification: State of the Art

Initial stages of porous silicon formation: An in‐situ investigation of the electronic properties and surface morphology

Electrochemistry of metals and semiconductors in fluoride media

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