Relationships between etch rate and roughness of plasma etched surface

Kim, Byungwhan; Lee, Byung‐Teak

doi:10.1109/tps.2002.807497

Cited by 29 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This significantly reduces the complexity of the SiC nanodevice fabrication process, which severely restricts the design and implementation of the associated NEMS devices. Studies have shown that by meticulously adjusting the parameters for the dry plasma etching of SiC, roughness as low as 0.6–1 nm can be achieved, [ 75 ] which is comparable to the roughness yielded by our technique. However, identifying a suitable high‐selectivity mask material for the dry etching of SiC remains challenging.…”

Section: Discussionsupporting

confidence: 60%

Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication

Wen,

Zhang,

Wang

et al. 2024

Small Methods

View full text Add to dashboard Cite

Silicon carbide (SiC) is a promising material for a wide range of applications, including mechanical nano‐resonators, quantum photonics, and non‐linear photonics. However, its chemical inertness poses challenges for etching in terms of resolution and smoothness. Herein, a novel approach known as helium ion‐bombardment‐enhanced etching (HIBEE) is presented to achieve high‐quality SiC etching. The HIBEE technique utilizes a focused helium ion beam with a typical ion energy of 30 keV to disrupt the crystal lattices of SiC, thus enabling wet etching using hydrofluoric acids and hydrogen peroxide. The etching mechanism is verified via simulations and characterization. The use of a sub‐nanometer beam spot of focused helium ions ensures fabrication resolution, and the resulting etched surface exhibits an extremely low roughness of ≈0.9 nm. One of the advantages of the HIBEE technique is that it does not require resist spin‐coating and development processes, thus enabling the production of nanostructures on irregular SiC surfaces, such as suspended structures and sidewalls. Additionally, the unique interaction volume of helium ions with substrates enables the one‐step fabrication of suspended nanobeam structures directly from bulk substrates. The HIBEE technique is expected to facilitate and accelerate the prototyping of high‐quality SiC devices.

show abstract

Section: Discussionsupporting

confidence: 60%

Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication

Wen,

Zhang,

Wang

et al. 2024

Small Methods

View full text Add to dashboard Cite

show abstract

“…The increase in etch rate with pressure is mainly due to increase in concentration of reactive chlorine species that enhances chemical component of etching, suggesting reactant limited regime at lower pressures. Surface rms roughness is found to increase with pressure from 9nm at 3mTorr to 31nm at 7.5mTorr [16]. The rms roughness of the un-etched GaN surface is 4.4nm.…”

Section: Resultsmentioning

confidence: 90%

Cl2/Ar based inductively coupled plasma etching of GaN/AlGaN structure

Rawal

Arora

Agarwal

et al. 2012

16th International Workshop on Physics of Semiconductor Devices

View full text Add to dashboard Cite

Cl 2 /Ar based inductively coupled plasma etching of GaN/AlGaN is investigated using photoresist mask in a restricted domain of pressure < 10mTorr and RF power <100W, for selective mesa etching. The etch characteristics and rootmean-square surface roughness are studied as a function of process parameters viz. process pressure, Cl 2 percentage in total flow rate ratio, and RF bias at a constant ICP power, to achieve moderately high GaN etch rate with anisotropic profiles and smooth surface morphology. The etch rate and resultant rms roughness of etched surface increased with pressure mainly due to dominant reactant limited etch regime. The etch rate also increased with increasing Cl 2 % as a result of increased chlorine radicals that enhances chemical etching. The etch rate and rms roughness showed strong dependence on RF power with former increasing and later decreasing with applied RF power up to 80W. The process etch yield variation with applied RF bias is also reported. Negligible etch selectivity was observed between GaN and AlGaN up to 25% aluminum concentration with etch rate ~120nm/min. The studied etch parameters resulted in highly anisotropic mesa structures with Ga rich etched surface.

show abstract

“…7) The etching rate of SiC under plasma with C 2 F 6 /O 2 condition increases when source power or bias power increases. 8) It is reported that higher bias energy increases etching rates. 9,10) Reference 10 reported that etching rate of SiO 2 showed dependence on incident energy in plasma.…”

Section: Introductionmentioning

confidence: 99%

Fluorine and oxygen plasma exposure behavior of yttrium oxyfluoride ceramics

Miyashita

Tsunoura

Yoshida

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Yttrium oxyfluoride ceramics, YOF and Y 5 O 4 F 7 , are promising materials with plasma durability and they are expected to be suitable for plasma etching equipment. In this study, high energy fluorocarbon and oxygen plasma exposure behavior of YOF and Y 5 O 4 F 7 was evaluated. Due to simultaneous sputtering and chemical reaction, etching rates depended not on materials but on plasma conditions. Surfaces of Y 2 O 3 , YOF and Y 5 O 4 F 7 showed crater-like patterns after exposure to high-energy plasmas. Morphological observation and line roughness evaluation showed good durability of Y 5 O 4 F 7 because it had a flatter surface than YOF and Y 2 O 3 after plasma irradiation. TEM cross-sectional observation confirmed a disordered lattice pattern on Y 2 O 3 and YOF after fluorocarbon plasma and oxygen plasma exposure.

show abstract

Relationships between etch rate and roughness of plasma etched surface

Cited by 29 publications

References 16 publications

Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication

Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication

Cl2/Ar based inductively coupled plasma etching of GaN/AlGaN structure

Fluorine and oxygen plasma exposure behavior of yttrium oxyfluoride ceramics

Contact Info

Product

Resources

About