Relationships between material properties of piezo-electric thin films and device characteristics of film bulk acoustic resonators

Lee, Jin-Bock; Cho, Dong−Hyun; Kim, Doyoung; Park, Chang-Kyun; Park, Jin-Seok

doi:10.1016/j.tsf.2007.07.145

Cited by 19 publications

(8 citation statements)

References 16 publications

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“…The reactive sputtering process, employed for depositing AlN, requires careful control of the sputtering pressure at 1 Pa and nitrogen gas concentration (50% N 2 /Ar) to ensure alignment in the (0002) direction [41]. X-ray diffraction (XRD) analysis of our fabricated structure confirmed the successful deposition of the AlN film in the correct orientation, as indicated by the strong intensity peak at the 2θ position of around 36 degrees in Figure 5, corroborating the perpendicular alignment of the film relative to the cantilever beam's surface [41][42][43]. The final step in the device fabrication involved forming a cylindrical oscillator using a 3D printer.…”

Section: Fabrication and Characterization Of Mems Energy Harvester An...supporting

confidence: 60%

Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester

Kang,

Kim,

Shin

et al. 2024

Micromachines

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We introduce a micro-electromechanical system (MEMS) energy harvester, designed for capturing flow energy. Moving beyond traditional vibration-based energy harvesting, our approach incorporates a cylindrical oscillator mounted on an MEMS chip, effectively harnessing wind energy through flow-induced vibration (FIV). A highlight of our research is the development of a comprehensive fabrication process, utilizing a 5.00 µm thick cantilever beam and piezoelectric film, optimized through advanced micromachining techniques. This process ensures the harvester’s alignment with theoretical predictions and enhances its operational efficiency. Our wind tunnel experiments confirmed the harvester’s capability to generate a notable electrical output, with a peak voltage of 2.56 mV at an 8.00 m/s wind speed. Furthermore, we observed a strong correlation between the experimentally measured voltage frequencies and the lift force frequency observed by CFD analysis, with dominant frequencies identified in the range of 830 Hz to 867 Hz, demonstrating the potential application in actual flow environments. By demonstrating the feasibility of efficient energy conversion from ambient wind, our research contributes to the development of sustainable energy solutions and low-power wireless electron devices.

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Section: Fabrication and Characterization Of Mems Energy Harvester An...supporting

confidence: 60%

Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester

Kang,

Kim,

Shin

et al. 2024

Micromachines

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“…There is a considerable relationship between surface roughness and the electromechanical coupling coefficient; low surface roughness leads to higher values of electromechanical coupling coefficient . Figure shows the 1 × 1 μm 2 AFM scan for AlN films deposited on two different types of metallic seed layers.…”

Section: Resultsmentioning

confidence: 99%

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Imran

Yuan

Yin

et al. 2017

Surface & Interface Analysis

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Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200°C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c-axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c-axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (À3 GPa) as compared with Pt/Ti substrates (À7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano -electromechanical systems (MEMS/NEMS) for piezoelectric devices.

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“…Moreover, ZnO has remarkable physical properties such as a wide optical band gap (3.37 eV), high n-type conductivity, and relatively low electron concentration (10 18 -10 19 cm À 3 ) compared to indium tin oxide (ITO, 10 21 cm À 3 ). [2] Owing to these prominent properties, zinc oxide has been used for the fabrication of room temperature UV laser diodes, [3] piezoelectric transducers, [4] thin film bulk acoustic resonator (FBAR) filters, [5] light-emitting diodes (LEDs), [6] optical waveguides, [7] thin-film transistors, [8] and nano-generators. [9] Several techniques, including sputtering, [10] chemical vapor deposition, [11] atomic layer deposition (ALD), [12] chemical solution deposition, [13] and thermal evaporation, [14] have been used for the synthesis of ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

“…With the strategy mentioned above, we synthesized six new zinc complexes, namely, [Zn(dmamp (5), and [Zn-(dmamb)(hfac)] 2 (6), as potential precursors for the fabrication of ZnO thin films. The newly synthesized heteroleptic complexes were characterized by nuclear magnetic resonance (NMR) spectroscopy, Fourier transform infrared spectroscopy, elemental analysis (EA), thermogravimetric analysis (TGA), and single crystal X-ray diffraction.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Heteroleptic Zinc Complexes Containing Aminoalkoxide and β‐Diketonate Ligands

et al. 2021

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New heteroleptic complexes of zinc were designed and synthesized using aminoalkoxide and β-diketonate ligands. The complexes, [Zn(dmamp)(tmhd)] 2 (1), [Zn(dmamp)(acac)] 2 (2), [Zn(dmamp)(hfac)] 2 (3), [Zn(dmamb)(tmhd)] 2 (4), [Zn-(dmamb)(acac)] 2 (5), and [Zn(dmamb)(hfac)] 2 (6), were synthesized by controlled acid-base reactions between [EtZn (aminoalkoxide)] 2 and β-diketonate ligands. Single crystal x-ray diffraction showed that complexes 1 À 4 and 6 exist as dimeric molecular structures with the zinc metal centers interconnected by the alkoxy oxygen atom via μ 2 -O bonding and their gemetries exhibit distorted trigonal bipyrimidal. TGA curves of complexes 3 and 6 showed sharp weight losses in a single step with very low residues, which confirmed the excellent vaporization and thermal stability.

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Relationships between material properties of piezo-electric thin films and device characteristics of film bulk acoustic resonators

Cited by 19 publications

References 16 publications

Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester

Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Synthesis of Heteroleptic Zinc Complexes Containing Aminoalkoxide and β‐Diketonate Ligands

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