The relationship between Sn substitution for Ti and microwave dielectric properties of Mg(Ti 1-x Sn x )O 3 ceramics was investigated. Sn 4+ could substitute for Ti 4+ in MgTiO 3 and increase the crystal volume. All samples exhibited the MgTiO 3 -type phase with ilmenite structure as main phase. At the x range from 0 to 0.05, the secondary phase of Mg 2 TiO 5 was observed. Upon further increasing Sn content up to 0.15, the SnO 2 phase appeared. When the x value increased from 0 to 0.05, the dielectric constant decreased slightly and the quality factor increased sharply, whereas the dielectric constant increased and the quality factor decreased as the x value varied from 0.05 to 0.15. The temperature coefficient of resonant frequency moved toward positive value with Sn substitution. In particular, at the x range from 0.05 to 0.07, the ceramic sintered at 1360°C for 4 h exhibited excellent microwave dielectric properties of e r = 16.8-17.1, Q f = 298,000-312,000 and τ f = À53~À50 ppm/°C.