Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

Kail, Fatiha; Farjas, Jordi; Roura, P.; Secouard, Christophe; Nos, O.; Bertomeu, J.; Alzina, Francesc; Cabarrocas, Pere Roca i

doi:10.1063/1.3464961

Cited by 11 publications

(14 citation statements)

References 15 publications

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“…Another observation is that there is a general reduction in the bond angle disorder with increase in the hydrogen dilution ratios, and the corresponding film crystallinity increases. This finding supports the reports by Kail et al [31] and Chakraborty et al [32] in which hydrogen incorporation is vital to reducing network strain, and the lack of it will result in increased bond angle disorder. In our scenario, by deposition at higher H dilution ratio, more hydrogen is expected to be incorporated leading to reduced strain and bond angle disorder.…”

Section: Influence Of Intrinsic A-si:h Substrate On Doped Silicon Thisupporting

confidence: 82%

Micro Raman Spectroscopy Analysis of Doped Amorphous and Microcrystalline Silicon Thin Film Layers and its Application in Heterojunction Silicon Wafer Solar Cells

Ling

Stangl

et al. 2014

Trans. Mat. Res. Soc. Japan

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Hydrogenated p+ and n+ doped silicon thin films deposited using radio frequency (13.56 MHz) plasma-enhanced chemical vapour deposition (PECVD) are studied in detail using micro Raman spectroscopy to investigate the impact of doping gas flow, hydrogen dilution ratio, film thickness, and substrate type on the doped silicon thin film characteristics. In particular, by deconvoluting the micro Raman spectra into amorphous and crystalline components, quantitative and qualitative information on bond angle disorder, bond length, nature of film stress, and film crystallinity can be extracted and used to predict the performance of these doped silicon thin films in heterojunction silicon wafer solar cells. By applying optimised doped silicon thin film deposition conditions to our heterojunction carrier lifetime structures and cell structures, we demonstrate an efficient field-effect passivation from these doped layers with improvement in implied open-circuit voltage and effective minority carrier lifetimes across the injection levels of interest. In particular, the device relevant heterojunction carrier lifetime structure

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Section: Influence Of Intrinsic A-si:h Substrate On Doped Silicon Thisupporting

confidence: 82%

Micro Raman Spectroscopy Analysis of Doped Amorphous and Microcrystalline Silicon Thin Film Layers and its Application in Heterojunction Silicon Wafer Solar Cells

Ling

Stangl

et al. 2014

Trans. Mat. Res. Soc. Japan

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“…Experimental results strongly suggest that both the short-range order (SRO) [25] and the medium-range order (MRO) [37] tend to reach a maximum value at the onset of crystallization. The SRO is mainly related to bond-angle strain, which can be quantified by Raman spectroscopy.…”

Section: Discussionmentioning

confidence: 99%

“…All films were several microns thick, so heterogeneous nucleation at the film surfaces can be neglected except for one sample that consisted of a 0.5 µm thin a-Si:H film deposited on a highly crystalline 'microcrystalline film' (µc-Si:H) of the same thickness. Further details about these samples and the DSC experiments have been published elsewhere [25].…”

Section: Experimental Results For A-simentioning

confidence: 99%

Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

Kail

Molerà

Farjas

et al. 2012

J. Phys.: Condens. Matter

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The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 • C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

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“…Because strain energy is proportional to Δθ 2 20) , the strain energy decreases with annealing, which is consistent with structural relaxation. The reduction of Δθ caused by structural relaxation has also been con rmed by Raman spectroscopy 21) . Figure 4(a) shows the change in potential energy during annealing at 1200 K, suf ciently lower than the glass transition point.…”

Section: Resultsmentioning

confidence: 91%

Molecular Dynamics Study on Structural Relaxation Processes in Amorphous Germanium

Imabayashi

Ishimaru

2017

Mater. Trans.

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The structural relaxation of amorphous germanium was examined by molecular dynamics simulations based on the empirical Tersoff interatomic potential. Although the Tersoff potential overestimated both the melting and glass transition temperatures, it was able to reproduce the structural relaxation behavior. The potential energy decreases with thermal annealing below the glass transition temperature, but occasionally increases during structural relaxation. The mean square displacement of atoms also increases in these periods. These changes were attributed to cooperative atomic motion during the structural relaxation. Atomic trajectories revealed that structural changes are induced by spatially-and temporally-inhomogeneous atomic motions: atomically mobile and immobile regions coexist during structural relaxation.

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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

Cited by 11 publications

References 15 publications

Micro Raman Spectroscopy Analysis of Doped Amorphous and Microcrystalline Silicon Thin Film Layers and its Application in Heterojunction Silicon Wafer Solar Cells

Micro Raman Spectroscopy Analysis of Doped Amorphous and Microcrystalline Silicon Thin Film Layers and its Application in Heterojunction Silicon Wafer Solar Cells

Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

Molecular Dynamics Study on Structural Relaxation Processes in Amorphous Germanium

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