During the last decade, significant progress has been achieved in the rapidly growing field of the dynamics of hot carriers in metals. Here we present an overview of the recent achievements in the theoretical understanding of electron dynamics in metals, and focus on the theoretical description of the inelastic lifetime of excited hot electrons. We outline theoretical formulations of the hot-electron lifetime that is originated in the inelastic scattering of the excited quasiparticle with occupied states below the Fermi level of the solid. First-principles many-body calculations are reviewed. Related work and future directions are also addressed.Keywords: ab initio calculations, electron lifetimes, femtochemistry, time-resolved spectroscopy, many-body
INTRODUCTIONRecent advances in femtosecond laser technology have made possible the investigation of electron transfer processes at solid surfaces, which are known to be the basis for many fundamental steps in surface photochemistry and ultrafast chemical reactions. [1,2,3] These are typically atomic and molecular adsorption processes and catalytic reactions between different chemical species, which transfer energy from the reaction complex into the nuclear and electronic degrees of freedom of the solid substrate. These reactions may induce elementary excitations, such as quantized lattice vibrations (phonons), collective electronic excitations (plasmons), and electronhole (e-h) pairs. In metals, the excitation of e-h pairs leads to an excited or hot electron with energy above the Fermi level ε F and to an excited or hot hole with energy below ε F . It is precisely the coupling of these hot carriers with the underlying substrate which governs the cross sections and branching ratios of electronically induced adsorbate reactions at metal surfaces.It is the intent of this Review to discuss the current status of the rapidly growing field of the dynamics of hot carriers in metals. The energy relaxation of these hot electrons and holes is almost exclusively attributed to the inelastic scattering with cold electrons below the Fermi level (e-e scattering) and with phonons (e-ph scattering), since radiative recombination of e-h pairs may be neglected. Assuming that the excess energy of the hot carrier is much larger than the thermal energy k B T , the e-e scattering rate does not depend on temperature. Furthermore, for excitation energies larger than ∼ 1 eV inelastic lifetimes are dominated by e-e scattering, e-ph interactions being in general of minor importance. Only at energies closer to the Fermi level, where the e-e inelastic lifetime increases rapidly, does e-ph scattering become important. [4,5] Different techniques have recently become available for measuring hot-carrier lifetimes. Inverse photoemission (IPE) [6] and high resolution angle resolved photoemission (ARPE) [7] provide an indirect access to the lifetime of hot electrons and holes, respectively, by measuring the energetic broadening of transition lines after impigning an electron (IPE) or a photon (ARPE) in...