Relaxor behavior of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ceramics

Wu, Ningning; Song, Xuemei; Zhu, Mankang; Wang, Chao; Yan, Hui

doi:10.1007/s11434-009-0002-0

Cited by 15 publications

(7 citation statements)

References 30 publications

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“…Raman spectroscopy was performed, as shown in Figure c, to examine the phases of the as-deposited and annealed PMN–PT samples by utilizing a 514.5 nm Ar + ion laser. Both PMN–PT films exhibited similar Raman modes located at around 270, 550, and 800 cm –1 , which correspond to the T 2 g , E g , and A 1 g modes, respectively, in good agreement with typical overlapped tetragonal and rhombohedral phases with a perovskite structure . It is believed that the PNRs in the rhombohedral phase induce relaxor behavior, while the normal microscale domains in the tetragonal phase exhibit ferroelectric behavior .…”

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confidence: 60%

“…Both PMN− PT films exhibited similar Raman modes located at around 270, 550, and 800 cm −1 , which correspond to the T 2g , E g , and A 1g modes, respectively, in good agreement with typical overlapped tetragonal and rhombohedral phases with a perovskite structure. 42 It is believed that the PNRs in the rhombohedral phase induce relaxor behavior, while the normal microscale domains in the tetragonal phase exhibit ferroelectric behavior. 42 In the case of the as-deposited PMN−PT film, all the XRD peaks and Raman modes were broad owing to the smaller crystallite sizes as well as the highly disordered crystallinity, since an amorphous phase could be formed by the particle fracture during high-kinetic-energy collisions in the AD process.…”

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confidence: 99%

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Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

et al. 2021

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Flexible self-charging capacitor systems, which exhibit the combined functions of energy generation and storage, are considered a promising solution for powering flexible self-powered electronics. Here, we present a new approach to demonstrate a flexible self-charging, ultrafast, and high-power-density (SUHP) capacitor system by integrating an aerosol-deposited nanograined relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) capacitor and piezoelectric Pb(Zr x ,Ti1–x )O3 (PZT) harvester. The as-designed flexible SUHP capacitor system can generate electric energy with an open-circuit voltage of 172 V and a short-circuit current of 21 μA under a biomechanical bending force of human fingers. This energy can be stored in the integrated flexible capacitor part and then discharged with a high energy density of 2.58 J/cm3 within an ultrafast time of 480 ns. Moreover, a high power density of 5.38 MW/cm3 from the flexible SUHP capacitor suggests that the proposed approach for self-charging and energy storage may be an efficacious way to drive future flexible pulsed-power electronic devices.

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confidence: 60%

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confidence: 99%

Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

et al. 2021

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“…Because of the charge compensation effect, the lead vacancies tend to be located in the Nb‐rich regions, and would cause a decreasing lattice parameter and the reflection peaks broaden. However, further observation on the XRD patterns can find obvious splitting changes of diffractions near 2θ=45° as the annealing temperature increases, which reveal the structural transition to the tetragonal side in the annealed specimens 25,26 . Hence, it is natural to speculate that the increase of the content of tetragonal phase plays the dominant role to induce the broadening of the reflection peaks.…”

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confidence: 99%

Effect of Annealing Temperature on Dielectric Relaxation and Raman Scattering of 0.65Pb(Mg_1/3Nb_2/3)O₃−0.35PbTiO₃ System

Wang

Zhu

et al. 2010

Journal of the American Ceramic Society

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The influences of annealing temperature on the phase transition, dielectrical, and ferroelectric response of 0.65Pb(Mg1/3Nb2/3)O3−0.35PbTiO3 (PMN−35PT) have been investigated in detail. X‐ray diffraction combined with Raman spectra analysis indicated that the samples annealed below 1100°C show a complete perovskite structure while at higher temperature, the volatilization of PbO results in the formation of the pyrochlore phase. The relative intensity I740/I800 of A1g mode increased with the increase of annealing temperature, indicating the phase transition to the tetragonal side. The annealing can eliminate the grain‐boundary layer, release the internal stress, and improve the homogeneous distribution of polar nanoregions, resulting in the increase of dielectric constants and the decrease of relaxor behavior. Moreover, the squareness Rsq from the P–E hysteresis loop displayed the enhanced trend with the increase of annealing temperature, which can be attributed to the descending of B‐site cation order.

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“…But the peak was not observed during cooling. The existence of a peak in the real part of the dielectric constant was reminded of the ferroelectric phase transition [17][18][19][20]. The cooperation of the localized positive and negative carriers as well as the Maxwell-Wagner-type relaxation can also generate a dielectric peak [21][22][23].…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties of spinel ceramic Fe1.8V1.2O4

2012

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Spinel vanadates possess rich physics arising from the interaction among spin, orbital and lattice degrees of freedom. We report the dielectric properties of polycrystalline Fe 1.8 V 1.2 O 4 . A thermally activated dielectric relaxation appeared in low temperature due to the inhomogeneous conductivity between grains and grain boundaries. We found an artificial ferroelecticity in this sample. An abnormal frequency-independent dielectric peak appeared at room temperature when the samples were measured during warming in ambient air. However, this peak disappeared in the following cooling process. By dielectric frequency spectrum and equivalent circuit analysis in detail, we found the sample had a surface layer in warming but not in cooling process. We also confirmed that this surface layer was induced by the adsorption of water, which is responsible for the dielectric peak. system. The present paper studied the temperature and frequency dependent dielectric property of the Fe 1.8 V 1.2 O 4 polycrystalline. We observed a dielectric relaxation in a low temperature range and a frequency independent dielectric peak in a high temperature range.

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Relaxor behavior of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ceramics

Cited by 15 publications

References 30 publications

Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

Effect of Annealing Temperature on Dielectric Relaxation and Raman Scattering of 0.65Pb(Mg_1/3Nb_2/3)O₃−0.35PbTiO₃ System

Dielectric properties of spinel ceramic Fe1.8V1.2O4

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Relaxor behavior of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ceramics

Cited by 15 publications

References 30 publications

Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

Flexible Self-Charging, Ultrafast, High-Power-Density Ceramic Capacitor System

Effect of Annealing Temperature on Dielectric Relaxation and Raman Scattering of 0.65Pb(Mg1/3Nb2/3)O3−0.35PbTiO3 System

Dielectric properties of spinel ceramic Fe1.8V1.2O4

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Effect of Annealing Temperature on Dielectric Relaxation and Raman Scattering of 0.65Pb(Mg_1/3Nb_2/3)O₃−0.35PbTiO₃ System