Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET

Exploration of symmetric high-k spacer (SHS) hybrid FinFET for high performance application

“…Nevertheless, availability of few challenges is trivial even if many advantages are there [18]. The major issue for this SHS hybrid device is the total gate capacitance, which further degrades f T , and speed of the device.…”

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

“…[64][65][66] CP based p-n diode (exp.) [60,61], BJTs [62,95,111,112], TFET [63], IMOS [113], Junctionless transistor [114], Biristor [115], SiGe-on-insulator MOSFET [116], graded channel MOSFET [117] EH bilayer TFET [79,80], EH bilayer TFET (exp.) [81], virtual diode (exp.)…”