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In this work we demonstrate an N-channel tunnel field effect transistor (TFET) i.e. double gate N-TFET for improved subthreshold slope (SS) and OFF-state leakage current (I OFF ) with reference to drain bias (V DS ), and body thickness (T SI ). Device thickness is becoming a crucial parameter as more devices can built on thin film and integrate double or multi-gate MOSFETs. In this model we analyze the impact of V DS and T SI on the device performances and express the limitation of T SI with respect to ON-state current (I ON ), electric field, energy band diagram, etc. TFETs have become popular because these devices can operate in the sub-threshold region with the larger transconductance to current ratio (g m /I d ) than MOSFETs, the current turn-on mechanism being interband tunneling rather than thermionic emission. The proposed model can achieve a subthreshold swing less than 35 mV/decade that is desirable for designing low-power high-frequency analog integrated digital circuit applications.

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