Heavy-Ion Irradiation effect in trigate SOI tunnel FETs with High-k Spacer technology

Pradhan, K P; Sahu, Prasanna Kumar; Mallikarjunarao,

doi:10.1109/tencon.2016.7848455

Cited by 2 publications

(1 citation statement)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Meanwhile, reliability issues due to the effects of radiation have been considered to be very important in semiconductor device development for a long time, as they can cause sudden abnormal semiconductor operations. As semiconductor devices become smaller, the probability of exposure to Micromachines 2019, 10, 847 2 of 11 radiation decreases, but the signal-to-noise margin of the device decreases simultaneously, meaning that the effects of radiation remains an important reliability analysis factor [14][15][16]. When high-energy particles are injected into the semiconductor device, they releases energy inside the substrate, and immediately producing electrons and holes (electron hole pair (EHP) generation).…”

Section: Introductionmentioning

confidence: 99%

Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node

et al. 2019

View full text Add to dashboard Cite

The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. An alpha particle was injected into a field effect transistor (FET), which resulted in a drain current fluctuation and caused the integrated circuit to malfunction as the result of a soft-error-rate (SER) issue. It was subsequently observed that radiation effects on NS-TFET were completely different from a conventional drift-diffusion (DD)-based FET. Unlike a conventional DD-based FET, when an alpha particle enters the source and channel areas in the current scenario, a larger drain current fluctuation occurs due to a tunneling mechanism between the source and the channel, and this has a significant effect on the drain current. In addition, as the temperature increases, the radiation effect increases as a result of a decrease in silicon bandgap energy and a resultant increase in band-to-band generation. Finally, the radiation effect was analyzed according to the energy of the alpha particle. These results can provide a guideline by which to design a robust integrated circuit for radiation that is totally different from the conventional DD-FET approach.

show abstract

Section: Introductionmentioning

confidence: 99%