Reliability and performance improvement of InGaZnO thin film transistors with organosilicon passivation layers

Liu, Chang; Qin, Houyun; Liu, Yiming; Song, Wei; Wang, Hongbo; Zhao, Yi

doi:10.1016/j.mssp.2020.105390

Cited by 8 publications

(4 citation statements)

References 27 publications

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“…22 These AOSs can include ZnO, InZnO (IZO), ZnSnO (ZTO), InSnZnO (ITZO), and InGaZnO (IGZO). 5,6,10,19,[22][23][24][25][26][27][28] The major advantage of AOSs against other conventional semiconductors is the room temperature deposition applicability. 29 Specifically, IGZO demonstrated a very high performance as an active layer in TFT, due to its large on/off current ratio, high field effect mobility, low threshold voltage, and sharp sub threshold swing.…”

Section: Introductionmentioning

confidence: 99%

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Hussien

Abdellatif

2021

Int J Numerical Modelling

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Thin film transistors (TFTs) are ranked as one of the promising field-effect transistors in the electronic industry. TFTs showed a great potential in many applications where liquid crystal displays, touchscreens, and biosensors are of the leading. In the current study, we are demonstrating a numerical carrier transport model based on finite element method (FEM), to investigate InGaZnO (IGZO) based TFTs. Amorphous silicon TFT has been simulated as a bare device. The impact of scaling down the dimension of the TFT, up to 30 nm channel length, on the output performance characteristics of the transistor has been addressed. Additionally, the effects of active semiconductor layer doping concentration and oxide layer thickness have been investigated. Moreover, a novel approach is introduced to correlate the selected input design parameters with a set of characteristic outputs including threshold voltage, on/off current ratio, and subthreshold swing. The proposed model correlates input and outputs using a characteristic matrix with nine coefficients, making it possible to predict, that is, interpolate, the characteristic outputs within the system boundaries. The suggested model was verified with respect to input data as well as data from the literature showing a very acceptable agreement.

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Section: Introductionmentioning

confidence: 99%

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Hussien

Abdellatif

2021

Int J Numerical Modelling

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“…The concept of hydrogen interacting with a-IGZO as a donor, contributing an electron to the conduction band, is well established through both computational 9,10,22 and experimental methods, the latter of which have commonly found a negative shift in the TFT I D − V G transfer curve turn-on voltage (V ON ) after hydrogen incorporation. 11,16,[23][24][25][26][27][28][29] Hydrogen concentrations of order 10 20 − 10 21 cm −3 are often observed in a-IGZO via secondary ion mass spectroscopy (SIMS) assessment; 9 however, this hydrogen must be predominantly electrically inactive, or it would result in far larger negative shifts in the value of V ON then are observed. It is generally agreed upon that the donor effect observed with hydrogen incorporation involves hydrogen bonding with oxygen atoms in the disordered a-IGZO lattice, yielding OH − .…”

Section: Introductionmentioning

confidence: 99%

Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors

Mattson,

Vogt,

Wager

et al. 2021

Preprint

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Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate voltage (I D − V G ) transfer curve turn-on voltage. Normally, hydrogen is thought to create shallow electronic states just below the conduction band mobility edge, with the donor ionization state controlled by equilibrium thermodynamics involving the position of the Fermi level with respect to the donor ionization energy. However, hydrogen does not behave as a normal donor as revealed by the subgap density of states (DoS) measured by the photoconduction response of top-gate a-IGZO TFTs to within 0.3 eV of the CBM edge. Specifically, the DoS shows a subgap peak above the valence band mobility edge growing at the same rate that I D − V G transfer curve measurements suggest that hydrogen was incorporated into the channel layer. Such hydrogen donor behavior in a-IGZO is anomalous and can be understood as follows: Non-bonded hydrogen ionization precedes its incorporation into the a-IGZO network as a bonded species. Ionized hydrogen bonds to a charged oxygen-on-an-oxygen-site anion, resulting in the formation of a defect complex denoted herein as,1− defect complex creates a spectrally-broad (∼0.3 eV FWHM) distribution of electronic states observed in the bandgap centered at 0.4 eV above the valence band mobility edge.

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“…32 Thin-film transistors (TFTs) that use a-IGZO are a replacement for those that use amorphous Si (a-Si) TFTs. 33 In contrast to polycrystalline ZnO, a-IGZO has an s-orbital conduction band with a spherical symmetry so it is insensitive to structural disorder, which is crucial for flexible electronic applications. 34 a-IGZO can also be used to detect low levels of NO 2 , 35 H 2 S 36 and O 3 .…”

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confidence: 99%

“…37 Deposing a-IGZO films involves the use of expensive high vacuum equipment for sputtering. 33,38 Solution-processing is a lowcost process and allows easy adjustment of stoichiometry. 39 However, critical challenges still exist for solution-processed a-IGZO.…”

mentioning

confidence: 99%

Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure

Lin

Huang

2022

ECS J. Solid State Sci. Technol.

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This study uses acetylacetone (acac) as an additive to control the size of the nanostructure of solution-processed a-IGZO for ozone (O3) gas sensor applications. It is found that by adding acac, the gas response, response time, and recovery time of an IGZO gas sensor are highly improved. Under the optimal condition (4 wt%), the IGZO sensor shows a gas response of 19 and a response/recovery time of 80/120 s, against 5 ppm O3. Adding acac significantly increases the number of oxygen vacancies within an a-IGZO film so more electrons are available for reaction with the gas. The increased number of oxygen vacancies means that more dangling bonds are created, which activates the gas adsorption process. Moreover, the IGZO gas sensor has an excellent long-term stability showing negligible variation in gas response over 2 months. This method allows easy fabrication of a high-performance gas sensor that uses solution-processed a-IGZO as a sensing layer.

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Reliability and performance improvement of InGaZnO thin film transistors with organosilicon passivation layers

Cited by 8 publications

References 27 publications

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors

Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure

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