This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 • C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm 2 /Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I ON /I OFF of more than 10 7. The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices. Index Terms-Capacitive coupled plasma assistant magnetron sputtering, low temperature, high performance, a-IGZO, thin film transistors.

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