Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

Ashton, James P.; Lenahan, Patrick M.; Lichtenwalner, Daniel J.; Lelis, Aivars J.; Anders, Mark

doi:10.1109/irps.2019.8720423

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…Recent ESR and electrically detected-magnetic-resonance studies have reported a remarkable reduction of P bC centers at the SiO 2 /SiC interfaces due to Ba incorporation, similar to a NO treatment. 305,308) Furthermore, a cross-sectional TEM analysis has revealed that Ba incorporation completely relaxes stress at the SiO 2 /SiC interface, 309) which might be a sign of elimination of highly stressed C=C defects. A theoretical study also predicts that Pdoped SiO 2 acts as a carbon-absorber and effectively eliminates impurities from the SiO 2 /SiC interface.…”

Section: Possible Origins Of Interface Defectsmentioning

confidence: 99%

Defect engineering in SiC technology for high-voltage power devices

Kimoto

Watanabe

2020

Appl. Phys. Express

204

100

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Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-state loss, and fast switching, compared with those of the Si counterparts. Through recent progress in the material and device technologies of SiC, production of 600–3300 V class SiC unipolar devices such as power metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes has started, and the adoption of SiC devices has been demonstrated to greatly reduce power loss in real systems. However, the interface defects and bulk defects in SiC power MOSFETs severely limit the device performance and reliability. In this review, the advantages and present status of SiC devices are introduced and then defect engineering in SiC power devices is presented. In particular, two critical issues, namely defects near the oxide/SiC interface and the expansion of single Shockley-type stacking faults, are discussed. The current physical understanding as well as attempts to reduce these defects and to minimize defect-associated problems are reviewed.

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Section: Possible Origins Of Interface Defectsmentioning

confidence: 99%

Defect engineering in SiC technology for high-voltage power devices

Kimoto

Watanabe

2020

Appl. Phys. Express

204

100

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“…Additionally, some distinctively new drivers for SiC MOSFETs, which can deliver an even higher performances, have also been proposed. The advantage of SiC JFETs over SiC MOSFETs is that no gate insulator films are required [7‐10]. Thus, SiC JFETs are potentially useful in environments with high junction temperatures [11,12] by using advanced high‐temperature packaging technology.…”

Section: Introductionmentioning

confidence: 99%

AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

Sakamoto

Yokoyama

Hozoji

2020

IEEJ Transactions Elec Engng

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Theoretically, normally-off silicon carbide (SiC) junction field-effect transistors (JFETs) do not require a negative gate voltage supply because they are in an off-state when the gate-source voltage is 0 V. However, most gate drivers for normally-off SiC JFETs require not only a positive power supply for turning on the JFET but also a negative power supply for turning it off and maintaining a negative gate-source voltage to suppress a false turn-on power loss caused by crosstalk during fast switching. Therefore, modifications of gate drivers increase complications and costs. In this study, a normally-off SiC JFET gate driver, which can be realized using a simple circuit configuration with a single power supply, is proposed. To minimize undesirable crosstalk, the gate-source voltage of the JFET is driven to a negative value and retained in the state for a long period of time.

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Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

Cited by 2 publications

References 13 publications

Defect engineering in SiC technology for high-voltage power devices

Defect engineering in SiC technology for high-voltage power devices

AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

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