Reliability and performance of 808-nm single emitter multi-mode laser diodes

Wang, J.; Bao, Ling; DeVito, Mark; Xu, Dehui; Wise, Damian; Grimshaw, Mike; Dong, Weimin; Zhang, S.; Bai, Chendong; Leisher, Paul O.; Li, D.; Zhou, Hongming; Patterson, Steve; Martinsen, R.; Haden, Jim

doi:10.1117/12.842876

Cited by 13 publications

(2 citation statements)

References 6 publications

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“…Jenoptik attained a PCE of 53% at 50 • C compared with a PCE of 60% at 25 • C for 808 nm bars by employing a heat sink with low thermal resistance [19]. nLight Corporation reported single emitter broad area devices with high-temperature (HT) structure design [20]. These devices had a PCE of 56% at 25 • C, and it was reduced to around 50% at 60 • C. In 2016, Coherent Inc. reported a PCE of 63% for a single emitter achieving 9 W at 8 A with a 140 µm stripe width [14].…”

Section: Introductionmentioning

confidence: 99%

808 nm broad-area laser diodes designed for high efficiency at high-temperature operation

Lan

Yang

Liu

et al. 2021

Semicond. Sci. Technol.

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Semiconductor lasers with high power conversion efficiency (PCE) and output power are heavily investigated driven by more energy-efficient commercial applications. In this paper, an asymmetric broad area laser (A-BAL) design is studied and compared with a conventional symmetric broad area laser (S-BAL) design for 808 nm single emitter laser diodes. We present a comparative theoretical and experimental investigation by studying the thermal effects on the laser parameters. The output characteristics and efficiency loss paths for the designs were analyzed. The leakage of carriers was identified as the primary source of the PCE reduction with temperature. Suppressing this leakage by optimization of the A-BAL design, a record continuous-wave PCE of 68% at 25 • C and 60.4% at 75 • C were achieved for a single emitter laser with 10 W output power. These devices deliver high efficiency at high temperatures with reliable operation achieving 2000 h of an accelerated aging lifetime without failures.

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Section: Introductionmentioning

confidence: 99%

808 nm broad-area laser diodes designed for high efficiency at high-temperature operation

Lan

Yang

Liu

et al. 2021

Semicond. Sci. Technol.

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“…Edge-emitting laser diodes are key components in a wide range of applications because of their high wall-plug efficiency (WPE) up to 70% 1,2 and high lifetest time of over thousands of hours. 3 The laser diodes at the wavelengths of (905 6 10) nm have various applications such as pumping fiber lasers and integrated with silicon detector for an information system due to the sensitivity of silicon detector to this wavelength range. However, they usually have a very large divergence angle ($40 ) in the fast axis, which restricts their applications.…”

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confidence: 99%