Reliability Assessment of a WBG-based Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains

A Multi-Objective Co-Design Optimization Framework for Grid-Connected Hybrid Battery Energy Storage Systems: Optimal Sizing and Selection of Technology

“…The reliability calculation of the PCS only considers the power semiconductors (i.e., a discrete SiC MOSFET, 1200 V, 115 A, 16 mΩ, Gen 3), which are the most failure-prone devices in PCSs [41]. The quality of the parts for the converter has been selected as MIL specified quality, but with a lower π Q factor since they are sourced commercially.…”

“…The base failure rate is expressed by a model relating to the influence of electrical and thermal stresses on the MOSFET switch. The base failure rate is subjected to a modifier based on the power rating utilized by the MOSFET (π A ), on the category of environmental application such as whether the MOSFET is utilized in a marine or aerial or space, or ground (π E ), on the maximum junction temperature, Tj, expressed during the load profile, as given by T max in Equation ( 19) (π T ), the level of quality at which the manufacturing process of the MOSFET is accomplished (π Q ), and the final influence on the stress modifier of the base failure rate is the breakdown voltage stress factor (π B ).These are considered from [40,41] for MOSFET lifetime formulation. The six switches (n = 6) in a series association are used in the convert power stages to estimate the PCS system-level lifetime.…”

Real-Life Mission Profile-Oriented Lifetime Estimation of a SiC Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains

“…The cross-sectional view of a SiC MOSFET module is depicted in Fig. 1, which represents different types of possible wear-out damage due to varying coefficients of thermal expansion (CTE) among the various materials in a wire-bonded SiC power module package [7], [9].…”

“…The reference drain-source voltage and current are represented as VDS,ref and IDS,ref , switching loss dependency coefficients for voltage and current are lv and li. The instantaneous average switching losses of a MOSFET can be obtained by equation (9). , = .…”

Energy management and ECO-strategies modeling of electric bus fleets in Barcelona city

“…The lifetime of the ESS is expressed in terms of the relative capacity degradation, which is a function of the number of charge and discharge cycles and the temperature profile experienced by the battery. On the other hand, the lifetime of the PE modules is expressed in terms of their reliability [7], which is a function of the current profile experienced by the PE modules.…”