Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

“…Indeed, stress voltages from 4V to 7V were applied to the anode-cathode contact which is well above the usual operating forward voltage for these devices, namely V F =1.83 V and 1.74V for the N-based and O-based dielectric devices, respectively. More explanation about this observation was reported in our previous work [7]. In both cases, a Weibull distribution is found to fit well the data.…”

“…This improved structure was fabricated in a 200-V GaN-on-Si platform and tested under ON-state stress conditions. The results demonstrated a recoverable behavior with better reliability and longer lifetime expectation compared to previous works in 200-V technology [7]. Although promising results were obtained, a clear method to link the process to the reliability in ON-state regime is missing.…”

Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido

“…El mismo procedimiento se ha usado en las obleas referencial, doble GET y bicapa GET en la tecnología de 650V. Adaptado de (Acurio et al, 2020) Al analizar el impacto en el tiempo estimado de vida cuando se modifica la estructura del ánodo en la tecnología de 650V cambiando desde una capa simple de Si3N4 (oblea referencial) en la estructura GET a una capa adicional de Si3N4, las mediciones indican que la confiabilidad se ve comprometida al aumentar la capa adicional de Si3N4. El tiempo en el que se alcanza el criterio de falla disminuye significativamente con respecto a la oblea referencial como se observa en la Figura 5 (b).…”

“…Parámetros iniciales VTON_0, VF_0 y RON_0 medidos al comienzo de tres experimentos bajo las mismas condiciones de estrés (Vestrés = 6 V, T = 150 ° C) en la oblea referencial de 200 V. Se obtiene una curva IV repetible en los GET-SBDs solo después de la primera prueba de estrés, la cual se considera una fase inicial de liberación de cargas. Adaptado de(Acurio et al, 2020)…”

Enhancement-mode p-GaN Comparators for power applications

“…Hence, this p-GaN layer helps to deplete the 2DEG resulting in a normally-OFF device [4]. Recently, the introduction of GaN-on-SOI (GoS) process [5] have enabled a monolithic integration of p-GaN (normally-OFF or Enhancement-mode) along with the conventional GaN devices, similarly to CMOS process. This technology have been introduced in the perspective: 1) to implement GaN based integrated circuits (GaN-ICs) [6] 2) to build power management units and 3) to get more energy efficient operation of power electronic systems [7].…”