Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis

Stiasny, Thomas; Quittard, O.; Waltisberg, Ch.; Meier, Urs

doi:10.1016/j.microrel.2018.07.079

Cited by 5 publications

(2 citation statements)

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Section: Introductionmentioning

confidence: 99%

“…For such applications and because of the low switching frequency of the individual semiconductor power switches provided by the large number of levels, the replacement of the insulated-gate bipolar transistor (IGBT) by the integrated gatecommutated thyristor (IGCT) appears to be advantageous [5] because the IGCT has low on-state losses, inherent short-circuit failure-mode (SCFM) and higher reliability [6][7][8] with improved thermal cycling capabilities [9,10]. The use of this device for MMC-HVDC applications is being intensively investigated in China [11][12][13], where many multi-terminal HVDC links have been installed over the last ten years with a growing interest in coupling LCC technology with VSC-MMC solutions [14].…”

Section: Introductionmentioning

confidence: 99%

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Selection of an IGCT for multilevel converters dedicated to high‐voltage direct current grid connection of offshore wind‐farms

Ladoux

Sanchez

Cornet

et al. 2021

IET Power Electronics

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Grid connection of remote offshore wind-parks uses high-voltage direct current technology and in order to reduce costs and losses and maximise profitability, semiconductor power losses must be minimised. To properly choose the semiconductors, it is necessary to estimate their losses for a large number of operating conditions. This article deals with a modelling approach to calculate power losses for many such operating conditions, based on measured semiconductor characteristics and the chosen multilevel modulation strategy. The case of the integrated gate-commutated thyristor is considered because, for a given device rating, it is possible to select an integrated gate-commutated thyristor benefiting from the best trade-off between on-state losses and turn-off losses, thus minimising the power losses of the two end-stations.

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