Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In_0.75Ga_0.25As channel

Structural effects on heat dissipation in InGaAs MHEMTs

“…High channel temperature not only degrades the device characteristics but also decreases the device lifetime. Experimental proofs have been observed for InGaAs MHEMTs [4][5][6][7], and the importance of the long-term stability of MHEMTs has been reported by several research groups [8][9][10][11][12]. It was reported that high channel temperature accelerated degradation processes in MHEMTs, such as gate sinking, ohmic contact degradation, hot electron issues, etc 3 Author to whom any correspondence should be addressed.…”

The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors

“…These degradations not only reduce the DC driving current at the same bias condition, but also affect the RF performance of transistors, such as power gain and linearity. Although major causes of degradation have been clarified, the actual dominated mechanism is still dependent on bias conditions and device structures, as gate length, gate-recess, surface treatment and layer construction (20). Therefore, the reliability issues of p-HEMTs with different structures still remain to be investigated.…”

Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications

“…The speed of the device can be improved by shortening the gate length (L g ), but shortening the L g below sub-micrometer range requires various complex lithographic techniques [11][12][13][14][15][16][17][18][19][20][21][22]. This state-of-art performance requires careful attention to the technological details of gate formation, layer design, and MBE growth by multilevel resist process using e-beam lithography forming various metal insulator geometries like T-gate, Γ-gate etc.…”