Reliability of etched-mesa buried-heterostructure semiconductor lasers

Huang, Jia-Sheng; Nguyen, Tiffany; Hsin, Wei; Aeby, Ian; Ceballo, R.; Krogen, J.

doi:10.1109/tdmr.2005.860562

Cited by 16 publications

(3 citation statements)

References 39 publications

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“…For the fitting of degradation curves, the polynomial function has been employed to describe the aging behaviors of both lasers (Sim, 1989;Huang et al, 2005) and photodiodes (Kuhara et al, 1986). Typically, the sublinear model provides more accurate fit.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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“…The physical meaning is that the degradation would become larger when the surface defect concentration is higher. The surface defect at the InGaAs could result from process such as reactive ion etch (RIE) during the contact opening (Huang, 2012;Morello et al, 2006) or metallic compound formation at the metal/InGaAs interface (Huang et al, 2003;Huang et al, 2005).…”

Section: Resultsmentioning

confidence: 99%

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

Huang¹,

Jan²,

Ren³

et al. 2016

APR

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To enable high-performance fiber to the x (FTTx) and datacenter networks, it is important to achieve reliable and stable optical components over time. Laser diode is the essential building block of the optical components. Degradation analysis is critical for overall successful reliability design. In this paper, we study the modelling and experimental data of the InGaAs/InP laser degradation. We present a defect diffusion model that involves three propagation media (p-InGaAs contact, p-InP cladding and multi-quantum wells). We propose a simple constitutive equation based on the Gauss error function to describe the defect propagation. The physical model assumes that the p-InGaAs is the rate-limiting factor for the defect diffusion process.

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“…The other is the waste of energy and cost to replace the failure parts. After a few decades of reliability studies on diode lasers, the optoelectronics industry has attained better understanding of degradation characteristics such as degradation behavior, failure criterion and temperature acceleration factor (Fukuda, 1988;Chin et al, 2003;Johnson, 2003;Sim, 1989;Huang, 2005;Huang et al, 2005;Lam et al, 2003;Chuang et al, 1998). On the other hand, there are still several outstanding reliability questions that remain challenging and debatable.…”

Section: Introductionmentioning

confidence: 99%

A New Kinetics Defect Diffusion Model and the Critical Current Density of Semiconductor Laser Degradation

Huang¹,

Jan²

2016

APR

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Critical current density on the electromigration failure is a commonly observed phenomenon in the integrated circuit (IC) interconnect. The critical current density is important for the lognormal distribution and failure time extrapolation of IC metal conductors. In this paper, we report the critical current density (j c ) of semiconductor laser degradation for the first time. Despite of the different physical origin, the j c of the laser degradation exhibits similar effect on the failure time distribution. We develop a new kinetic defect diffusion model that can account for the existence of j c . We discuss the physical mechanism and its implication in the reliability extrapolation of diode lasers.

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Reliability of etched-mesa buried-heterostructure semiconductor lasers

Cited by 16 publications

References 39 publications

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

A New Kinetics Defect Diffusion Model and the Critical Current Density of Semiconductor Laser Degradation

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