Reliability of InGaAs/InP photodiodes passivated with polyimide

Pereira, J.S.; Shieh, P.J.; Gobbi, Ângelo L.; Sato, E.; Malberti, P.; Santos, Tâmara Sibele dos; Borin, F.; Patel, Nashreen F.

doi:10.1109/relphy.1993.283273

Cited by 2 publications

(1 citation statement)

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“…3; (b) Bias temperature instability (BTI) The second potential root cause for the increase in dark current was related to the surface leakage current associated with mobile ion migration. For the polyimide passivation, there was some trace amount of impurities such as Na and Cu contained in the film (Watanabe et al, 1996;Pereira et al, 1993). Those impurities were likely to diffuse along the interface or into the passivation film driven by the high electric field at the depletion layer, as illustrated in Figure 3a.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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Section: Resultsmentioning

confidence: 99%