2003
DOI: 10.1109/tia.2003.810661
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Reliability of power cycling for igbt power semiconductor modules

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Cited by 201 publications
(48 citation statements)
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“…The IGBT power modules are therefore exposed to both stresses with various levels of temperature swings and frequencies. Previous studies have shown three ageing mechanisms on the bond wires: heel fractures (mechanical 6 IEEE TRANSACTIONS ON POWER ELECTRONICS constraints in the wires and fatigue phenomenon due to the deformation related to temperature swings), wire bond lift-off (mechanical stress on Al-Si joints due to the difference in the thermal expansion coefficient between Al and Si) and metallurgical damage (thermo-mechanical stress on Al coming from the difference in the thermal expansion coefficient between Al and Si) [18], [20], [42]. According to the International Electrotechnical Commission (IEC) [43], two types of cycle periods are considered: the sub-second to tens of seconds regime and the minute-range regime.…”
Section: Bond Wire Lifetime Consumption Analysismentioning
confidence: 99%
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“…The IGBT power modules are therefore exposed to both stresses with various levels of temperature swings and frequencies. Previous studies have shown three ageing mechanisms on the bond wires: heel fractures (mechanical 6 IEEE TRANSACTIONS ON POWER ELECTRONICS constraints in the wires and fatigue phenomenon due to the deformation related to temperature swings), wire bond lift-off (mechanical stress on Al-Si joints due to the difference in the thermal expansion coefficient between Al and Si) and metallurgical damage (thermo-mechanical stress on Al coming from the difference in the thermal expansion coefficient between Al and Si) [18], [20], [42]. According to the International Electrotechnical Commission (IEC) [43], two types of cycle periods are considered: the sub-second to tens of seconds regime and the minute-range regime.…”
Section: Bond Wire Lifetime Consumption Analysismentioning
confidence: 99%
“…An updated version, the Military-Handbook-217H, is under discussion [19] based on a more physics-based method. The second category is based on empirical lifetime models developed mainly from accelerated lifetime testing data [20]- [23]. It is the most widely used method for the lifetime prediction of IGBT modules.…”
Section: Introductionmentioning
confidence: 99%
“…Depending on load type, power cycling capability and solder material in parallel a degradation of the chip solder is occurring during PC [5]. Fig.…”
Section: Power Module Degradation Mechanismsmentioning
confidence: 99%
“…Approaches based on physics of failure Finite Element simulations and system level simulation are possible to investigate the failure mechanism itself and the influence of the system design and application specific influences [1][2][3][4][5]. Fig.…”
Section: Introductionmentioning
confidence: 99%
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