Reliability of power cycling for IGBT power semiconductor modules

Morozumi, Akira; Yamada, Kazutoyo; Miyasaka, Toru; Seki, Y.

doi:10.1109/ias.2001.955791

Cited by 52 publications

(46 citation statements)

References 8 publications

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“…Thermal cycling experiments on MOSFETs cycled 7000 times from -50°C to 100°C showed void formation in over 30% of the die solder attachment [9]. Similar results were demonstrated for IGBTs undergoing power cycling [10][11][12]; these results also showed the occurrence of wire lift in the devices. It should be noted that this effect is solder dependent.…”

Section: Related Worksupporting

confidence: 72%

Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

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Abstract-Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

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Section: Related Worksupporting

confidence: 72%

Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

View full text Add to dashboard Cite

show abstract

“…The failure is a complex process related to its dynamic characteristics, involving many factors, such as heat, electricity and machinery. Relevant institutions at home and abroad have studied the failure mechanism of IGBT [6]; according to the failure reasons, the power module failure methods can be roughly divided into the failure related to chip and packaging. Several typical failures include:…”

Section: Igbt Failure Mechanismmentioning

confidence: 99%

IGBT Neural Network Prediction Method of Radar Transmitter based on Levenberg-Marquard Optimization

Chen¹,

Lü²,

Fang³

et al. 2016

IJFGCN

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“…Power devices using IGBT modules are made of several multilayer structures that consist of silicon chips, ceramic layers, copper, solders, and polymers, all of which have different CTEs. The mismatch between CTEs and the various elastic moduli of the materials used can cause severe thermo-mechanical stresses and make the power modules susceptible to thermo-mechanical fatigue failures that result in cracking [11], lifting off of wires [12], [13], and delamination of the interface region [14]. Therefore, interconnected parts such as wires, bonding, and solders are the most vulnerable and essential components that determine the reliability and life span of IGBT modules.…”

Section: Introductionmentioning

confidence: 99%

Numerical Prediction of Solder Fatigue Life in a High Power IGBT Module Using Ribbon Bonding

Suh¹,

Jung²,

Lee³

et al. 2016

Journal of Power Electronics

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This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30° C lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

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Reliability of power cycling for IGBT power semiconductor modules

Cited by 52 publications

References 8 publications

Accelerated aging system for prognostics of power semiconductor devices

Accelerated aging system for prognostics of power semiconductor devices

IGBT Neural Network Prediction Method of Radar Transmitter based on Levenberg-Marquard Optimization

Numerical Prediction of Solder Fatigue Life in a High Power IGBT Module Using Ribbon Bonding

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