2011
DOI: 10.1109/tdmr.2010.2102026
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Reliability of Repetitively Avalanched Wire-Bonded Low-Voltage Discrete Power Trench n-MOSFETs

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Cited by 15 publications
(5 citation statements)
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“…At a given working condition, as long as the working condition is not changed, the predicted real-time power loss should have almost the same value as the normal power loss [10][11][12][13][14]. Thus, a significant difference between real-time power loss and normal power loss is an indication that there are some problems.…”
Section: Introductionmentioning
confidence: 99%
“…At a given working condition, as long as the working condition is not changed, the predicted real-time power loss should have almost the same value as the normal power loss [10][11][12][13][14]. Thus, a significant difference between real-time power loss and normal power loss is an indication that there are some problems.…”
Section: Introductionmentioning
confidence: 99%
“…Devices connected in parallel may begin the operational mission profile with almost identical thermal and electrical parameters, however, over time, may develop variations resulting from non-uniform rates of degradation. For instance, the thermal resistances of the power devices typically increase as a result of solder joint degradation due to thermo-mechanical stresses arising from coefficient of thermal expansion (CTE) mismatch between the die and the substrate [1][2][3][4]. Depending on the position of the device on the heat-sink, this effect of mechanical degradation may not occur at the same rate.…”
Section: Introductionmentioning
confidence: 99%
“…Another source of possible variation is the electrical switching time constant, which is determined by the gate resistance and internal capacitances. Over the operating life of the power device, thermomechanical stresses from temperature and power cycles mean that the gate resistance is likely to increase as a result of wirebond mechanical degradation [2,5]. If this degradation occurs at a non-uniform rate between parallel connected devices, then a situation can arise whereby parallel connected devices have significantly different gate resistances and therefore switch at different rates.…”
Section: Introductionmentioning
confidence: 99%
“…Methods of gate voltage VG behaviour monitoring [12,20,27,28] and gate current IG measurement [29][30][31] have also been researched recently. Precision measurement of resistances can monitor bond wire lift-off, as increases in conductive resistance is the direct impact of the failure [32][33][34]. By monitoring the capacitance of the flying capacitor Css , one of the major origins of failure in IGBT, voltage unbalance can be detected [35].…”
Section: Introductionmentioning
confidence: 99%