Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure

Soelkner, Gerald; Kaindl, W.; Treu, Michael; Peters, Dethard

doi:10.4028/0-87849-442-1.851

Cited by 10 publications

(12 citation statements)

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“…Failure of power diodes of voltage classes of 3500 V were the first, in fact, to draw the attention to cosmic radiation-induced failure in power electronic devices [38,39]. Later, neutron-induced diode failures were observed for voltage classes as low as 600 V. Diodes based on SiC also were observed to fail under nucleon irradiation [32,[40][41][42][43]]. …”

Section: Device Simulation Of Charge Multiplicationmentioning

confidence: 98%

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Soelkner

2016

Microelectronics Reliability

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Section: Device Simulation Of Charge Multiplicationmentioning

confidence: 98%

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Soelkner

2016

Microelectronics Reliability

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“…Further, failures can be initiated through self-sustaining discharges in the silicon by recoil nuclei caused by cosmic radiation. It has been shown that this is a problem for devices with a voltage class as low as 500V which makes it an important consideration for wind turbine converters [15].…”

Section: A Converter Failure Mechanismsmentioning

confidence: 99%

A Review of Methods to Increase the Availability of Wind Turbine Generator Systems

Shipurkar¹,

Polinder²,

Ferreira³

2016

CPSS TPEA

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Abstract-Availability is an important factor to be considered when designing wind turbine generator systems. The quest for increased availability is based on the following five design approaches -design for component reliability, active control for reliability, design for fault tolerance, prognostics, and design for maintainability. This paper reviews methods focussing on the first three, i.e. component reliability, active control, and fault tolerance. The paper further identifies some promising directions for further research.

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“…As a consequence, power devices are short-circuited and broken down to be permanently damaged. In IGBTs and MOSFETs, the ion-induced massive carrier multiplication may result in the turn-on of parasitic bipolar transistors, which will also lead to permanent device failure [9][10][11].…”

Section: Introductionmentioning

confidence: 99%