Reliability studies on GaN HEMTs with sputtered Iridium gate module

Lossy, R.; Blanck, H.; Würfl, Joachim

doi:10.1016/j.microrel.2012.06.154

Cited by 10 publications

(8 citation statements)

References 6 publications

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“…Performance and reliability of GaN-HEMTs for high-power radio-frequency (rf) applications are limited by the relatively high gate leakage. 2,3 The gate leakage reduces the breakdown voltage and the power-added efficiency and it increases the noise figure.…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Lossy

Gargouri

Arens

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated with an AlGaN/GaN heterostructure. The ALD-deposited Al2O3 layer served as gate dielectric under the gate electrode and as passivation layer in the access region. Different processing routes were tested and confirm that choosing the optimum order of processing steps is required to take full advantage of MIS-HEMT capabilities. Gate leakage currents as low as 2 × 10−10 A/mm at VGS = −20 V were measured. They are 4 orders of magnitude lower compared to the Schottky reference. Also, drain leakage went down to 10−8 A/mm and thus reduced by 3½ decades compared to the Schottky-type. The corresponding on/off-ratio rates 108. The subthreshold swing improved considerably from 180 mV/dec for the Schottky type to 90 mV/dec for the MIS-HEMT. Breakdown voltage is >200 V for a gate-drain distance >4 μm. From S-parameter measurements ft = 18 GHz and fmax = 72 GHz were extrapolated.

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Section: Introductionmentioning

confidence: 99%

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Lossy

Gargouri

Arens

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

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“…Strictly speaking, the increase in temperature due to power dissipation depends on transistor layout, epitaxial structure and the technology of transistor packaging. This means that in our experiment the absolute value of the second term can vary slightly from the one used in [9], but there is no variation in this term between wafers 1 and 2. Both wafers have identical epitaxial Fig.…”

Section: Life Time Testsmentioning

confidence: 71%

“…The exact sequence and the conditions of the life time testing are given below: V DS = 10 V and V G = 1 V. Usually, the aging of transistors was extended above this limit. This criterion is widely accepted in literature [9].…”

Section: On-wafer Measurements and Life Time Test Protocolmentioning

confidence: 99%

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Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors

Chevtchenko

Schulz

Bahat‐Treidel

et al. 2014

Microelectronics Reliability

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“…Однако проблема низкой надежности парамет-ров этих приборов, вызванная увеличением тока утечки затвора, падением выходной мощности и частоты при эксплуатации, в полной мере не решена до сих пор, несмотря на многолетние усилия мирового научного сообщества [4,5].…”

Section: Introductionunclassified

Многообразие Свойств Приборных Структур На Основе Нитридов Элементов III Группы, Связанное С Модификацией Фрактально-Перколяционной Системы

Емцев¹,

Гущина²,

Петров³

et al. 2018

Физика И Техника Полупроводников

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Фрактально-перколяционная система, включающая протяженные дефекты и случайные флуктуации состава твердого раствора, формируется в процессе роста приборных структур на основе нитридов элементов III группы. Установлено, что свойства этой системы определяются не только условиями роста. Показано, что многообразие электрических и оптических свойств светодиодов InGaN/GaN, излучающих на длинах волн 450−460 и 519−530 нм, а также электрофизических свойств HEMT-структур AlGaN/GaN вызвано модификацией свойств фрактально-перколяционной системы как в процессе роста, так и под действием инжекционного тока и радиационных воздействий. Обсуждается влияние этих особенностей на срок службы светоизлучающих приборов и надежность HEMT-структур AlGaN/GaN.

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Reliability studies on GaN HEMTs with sputtered Iridium gate module

Cited by 10 publications

References 6 publications

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors

Многообразие Свойств Приборных Структур На Основе Нитридов Элементов III Группы, Связанное С Модификацией Фрактально-Перколяционной Системы

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