Reliability study of nano ribbon FET with temperature variation including interface trap charges

Teja, Lakshmi Nivas; Chaudhary, Rashi; Tiwari, Shreyas; Saha, Rajesh

doi:10.1016/j.mseb.2023.116877

Cited by 3 publications

(1 citation statement)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, DC, RF/analog, and linearity characteristics for nano ribbon FET with variation in positive and negative interface trap charges, which is compared with no trap conditions are highlighted [18]. Further, such parameters are extracted for wide variation in temperatures at fixed trap concentration.…”

Section: Introductionmentioning

confidence: 99%

Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs

Rai,

Sharma,

Saha

et al. 2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

In this work, the trap sensitivity of single material gate (SMG) and dual material gate (DMG) nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap sensitivity is extracted for Gaussian trap distribution of both acceptor and donor type traps. We have reported the trap sensitivity for the variation in trap concentration, energy peak position, work function of metal gate, and temperature for both the NRFETs. It is realized that trap sensitivity is greater and lesser than 100% for acceptor type trap in SMG and DMG NRFETs, respectively, whereas, such sensitivity is 147% and 123% for donor type trap concentration, respectively. Temperature also shows a significant variation in trap sensitivity for both the NRFETs. The increase in work function leads to the reduction in trap sensitivity for both NRFETs in existence of acceptor and donor trap charges. The maximum sensitivity in trap are 400% and 275% for SMG and DMG NRFETs, respectively, in presence of donor trap concentration. Moreover, the trap sensitivity is very insignificant at high gate bias for donor type trap concentration with wide variation in parameters.

show abstract

Section: Introductionmentioning

confidence: 99%

Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs

Rai,

Sharma,

Saha

et al. 2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions

Rai,

Tiwari,

Chaudhary

et al. 2024

Materials Science and Engineering: B

View full text Add to dashboard Cite

Assessment of Trap Sensitivity in Dual Material Gate Nano-Ribbon FET for Different Gate Dielectric Materials

Saha,

Rai,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this work, TCAD Sentaurus Device simulator is used to report the trap sensitivity of dual material gate (DMG) Nano Ribbon FET (NRFET) with different gate dielectrics. The trap sensitivity is extracted for various dielectrics: SiO2 (k=3.9), HfO2 (k=22), Si3N4 (k=7.5) for Gaussian trap distribution of acceptor type traps. For the DMG-NRFET, we have reported the trap sensitivity for changes in temperature, work function of the metal gate, energy peak position, and trap concentration variation. For acceptor type trap in DMG-NRFET, it has been observed that trap sensitivity is equivalent to or less than 100% while taking into account different gate dielectrics such as SiO2, HfO2, or Si3N4. Temperature reveals a notable variation in trap sensitivity for DMG-NRFET. It is observed that trap sensitivity increases as the dielectric constant of gate oxides increases, and the device under consideration reports an increase in trap sensitivity when temperature rises. Additionally, as the gate metal's work function increases, the trap sensitivity decreases. The maximum trap sensitivity is100% for DMG-NRFET at high gate bias for variation in different parameters.

show abstract

Reliability study of nano ribbon FET with temperature variation including interface trap charges

Cited by 3 publications

References 24 publications

Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs

Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs

Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions

Assessment of Trap Sensitivity in Dual Material Gate Nano-Ribbon FET for Different Gate Dielectric Materials

Contact Info

Product

Resources

About