Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT

Fukai, Yoshino K.; Kurishima, K.; Kashio, Norihide; Yoshida, Shoji

doi:10.1109/iciprm.2010.5515966

Cited by 6 publications

(1 citation statement)

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“…The results indicate that the device failure under electro-thermal stress is mainly due to the traps introduced at the emitter-sidewall/passivation interface, the B-E junction, and the increase in the emitter resistance. Y. K. Fukai et al studied the reliability of submicrometer, high-speed and low-power InP HBTs with a 0.6 × 3 µm 2 emitter size at high current densities [12], and pointed out that the degradation of the B-E junction is the main factor leading to the failure of devices under high current densities. Hong Wang et al reported the reliability of InGaAs/InP DHBTs with two different emitters areas (emitter area of 5 × 20 µm 2 and 40 × 40 µm 2 ) under a high reverse B-C bias voltage (avalanche) regime [13].…”

Section: Introductionmentioning

confidence: 99%

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

Yan,

Lu,

Cheng

et al. 2023

Micromachines

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In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extracted to fully understand and analyze the high-field degradation mechanism of devices. The measurements indicate that the high-field stress leads to an increase in base current, an increase in base–collector (B–C) and base–emitter (B–E) junction leakage current, and a decrease in current gain, and different degrees of degradation of key parameters over stress time. The analysis reveals that the degradation caused by reverse high-field stress mainly occurs in the B–C junction, access resistance degradation, and passivation layer. The physical origins of these failure mechanisms have been studied based on TCAD simulation, and a physical model is proposed to explain the experimental results.

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Section: Introductionmentioning

confidence: 99%