2018 IEEE International Semiconductor Laser Conference (ISLC) 2018
DOI: 10.1109/islc.2018.8516251
|View full text |Cite
|
Sign up to set email alerts
|

Reliable 2 W DBR-Tapered Diode Lasers Lasing at 1180 nm Based on Highly Strained Quantum Wells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
6
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(6 citation statements)
references
References 3 publications
0
6
0
Order By: Relevance
“…This leads to highly compressively strained layers, which are at risk to undergo strain relaxation through the formation of crystal defects, which in turn are expected to impact device reliability. To reduce these effects, tensile strain-compensation layers next to the quantum well were applied 18,21,22 .…”
Section: Epitaxial Structurementioning
confidence: 99%
See 4 more Smart Citations
“…This leads to highly compressively strained layers, which are at risk to undergo strain relaxation through the formation of crystal defects, which in turn are expected to impact device reliability. To reduce these effects, tensile strain-compensation layers next to the quantum well were applied 18,21,22 .…”
Section: Epitaxial Structurementioning
confidence: 99%
“…7). At a power level of 1.2 W a clearly visible degradation (visible as an increase of the drive current) set in 18 . The red curve in Fig.…”
Section: Lifetime Testsmentioning
confidence: 99%
See 3 more Smart Citations