IEEE International Conference on Test, 2005.
DOI: 10.1109/test.2005.1584080
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Reliable and self-repairing sram in nano-scale technologies using leakage and delay monitoring

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Cited by 34 publications
(41 citation statements)
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“…For memory dominated structures, the SRAM array lookups have significantly more regularity and allow for dynamic partitioning and resizing which may allow them to improve performance in an energy-efficient manner by sacrificing capacity [30]. There has been a significant amount of work in adapting SRAM structures for use in both lowvoltage modes and severe parameter variation [25,30,31]. In contrast, logic dominated structures in the processor backend, most notably execution units, would be difficult to accelerate without significant impact to the power budget.…”
Section: Background and Motivationmentioning
confidence: 99%
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“…For memory dominated structures, the SRAM array lookups have significantly more regularity and allow for dynamic partitioning and resizing which may allow them to improve performance in an energy-efficient manner by sacrificing capacity [30]. There has been a significant amount of work in adapting SRAM structures for use in both lowvoltage modes and severe parameter variation [25,30,31]. In contrast, logic dominated structures in the processor backend, most notably execution units, would be difficult to accelerate without significant impact to the power budget.…”
Section: Background and Motivationmentioning
confidence: 99%
“…Due to overheads we do not use Razor to recover from timing errors in large SRAM structures. We instead implement resizing methods to trade off the capacity for energy savings for I-Cache and DCache [30]. We apply simple block-level resizing where blocks are selectively mapped out in the I-Cache and D-Cache.…”
Section: Dynamic Voltage Tuning and Optimizationmentioning
confidence: 99%
“…Atspeed logic and memory built-in self test (BIST) techniques can be employed as well for faster and any time computation of the signatures. Approximations using on-chip monitors (e.g., ring oscillators or monitors such as [22]) can work as well. Since signature measurement involves using test techniques with well understood overheads, in this work we do not discuss these methods in more detail.…”
Section: Signature Choice and Measurementmentioning
confidence: 99%
“…Reducing subthreshold leakage current causes variation in V th resulting in various functional failures in SRAM. These failures can be avoided by adaptively biasing the body since threshold voltage (V th ) is a function of body bias (Mukopadhyay et al, 2005;Lu and Naing, 2005). However this scheme requires larger bit cell area and overall SRAM area.…”
Section: Introductionmentioning
confidence: 99%