Relieving the Photosensitivity of Organic Field‐Effect Transistors

Liu, Jie; Jiang, Longfeng; Shi, Jia; Li, Chunlei; Shi, Yanjun; Tan, Jun; Li, Haiyang; Jiang, Hui; Hu, Yuanyuan; Liu, Xinfeng; Yu, Junsheng; Wei, Zhongming; Jiang, Lang; Hu, Wenping

doi:10.1002/adma.201906122

Cited by 81 publications

(109 citation statements)

References 42 publications

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“…Furthermore, it is also essential for the real-world applications of photodetectors, printable counterparts that are insensitive to lights to be integrated into a photodetector circuit building block or a system for signal conditioning and processing. Despite examples of using a photo-blocking layer that adds fabrication complexity and cost [17], it is also essential to find some intrinsic methods. Typical organic semiconductors have bandgaps of around 2 eV [6], of which the energy corresponds to a visible light, so they can be used for photo-sensitive OTFTs.…”

Section: Introductionmentioning

confidence: 99%

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

Jiang

2020

Crystals

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Printable organic thin-film transistors have enabled flexible low-cost electronics, which has the potential for a lot of emerging electronic applications. Despite the excellent dark performance of advanced all-inkjet printed organic thin-film transistors, their photoresponse is less explored and needs to be investigated, especially photoresponse to visible lights that human beings can see and are most familiar with. Importantly, for electronics integration, both devices with and without photo-sensitivity to visible light are important, for photo-detecting and signal processing, respectively. In this study, two organic semiconductor materials are used in all-inkjet printed organic thin-film transistors, namely 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene). By characterizing devices under optical exposure with wavelengths from 400 to 800 nm, photocurrents and threshold voltage shifts of the devices are extracted. The fabricated C8-BTBT organic thin-film transistors do not exhibit noticeable photo-sensitivity to visible light, whereas the TIPS-pentacene devices demonstrate significant photoresponse to visible lights, with photocurrents in nano- to micro-ampere levels and threshold voltage shifts of hundreds of millivolts to several volts depending on the photon energy of lights under the same intensity. The TIPS-pentacene devices demonstrated reproducible characteristics before and after light exposure. In addition, the responsivity and sensitivity of the devices were characterized with a decent responsivity of 55.9 mA/W. The photoresponse mechanisms are explained with ultraviolet–visible (UV–vis) adsorption spectroscopy measurements and extracted optical bandgaps of the two semiconductors. This study shows both printed organic transistors with and without photo-sensitivity can be fabricated with the same device structure and fabrication process at low cost, which opens the new possibility of using printed organic thin-film transistors for integrated optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

Jiang

2020

Crystals

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“…Thus, the use of the UV-responsive PVP layer and interfacial layer of PMMA, which does not have trapping sites, allows our proposed hybrid gate insulator configuration to yield p-OPTs with stable optical switching characteristics and better photoresponse than the conventional optical switching device (the OPTs with the single-polymer PMMA gate insulator). Note that the conventional optical switching device would further be expanded to the previously reported OPTs which had gate insulators of not only PMMA, but also polystyrene, amorphous fluoropolymer CYTOP, poly (4-phenoxymethyl styrene), and various types of self-assembly monolayers [17,23,24,34,35].…”

Section: Resultsmentioning

confidence: 99%

Enhanced Optical Switching Characteristics of Organic Phototransistor by Adopting Photo-Responsive Polymer in Hybrid Gate-Insulator Configuration

Park

Kim

2020

Polymers

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In this study, we developed polymer gate insulator-based organic phototransistors (p-OPTs) with improved optical switching properties by using a hybrid gate insulator configuration. The hybrid gate insulator of our p-OPT has a photoresponsive layer made of poly(4-vinylphenol) (PVP), which enhances the photoresponse, and an interfacial layer of poly(methyl methacrylate) for reliable optical switching of the device. Our hybrid gate insulator-equipped p-OPT exhibits well-defined optical switching characteristics because no specific type of charge is significantly trapped at an interfacial layer/organic semiconductor (OSC) interface. Moreover, our device is more photoresponsive than the conventional p-OPT (here, an OPT with a single-polymer poly(methyl methacrylate) (PMMA) gate insulator), because the characteristic ultraviolet (UV) absorption of the PVP polymer allows the photoresponsive layer and OSC to contribute to the generation of charge carriers when exposed to UV light.

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“…),the trapping experiment were performed to ascertain the same. [65] In this case, isopropyl alcohol (IPA), ammonium oxalate (AO), and benzoquinone (BQ) was used for trapping * OH, h + , and [a] The photocatalytic experiments were carried out by RhB dye degradation under visible light irradiation from a 500 W, tungsten halogen lamp.…”

Section: Resultsmentioning

confidence: 99%

Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

2020

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The unrestrained charge recombination inherently associated with inorganic semiconductors renders them inefficient for the targeted photocatalytic applications in their pristine state. A variety of compositing strategies have thus become important to mitigate the charge recombinations in this regard. In the present work, we report a modified solvothermal synthesis route to affect the synthesis of appropriately band-aligned h-BN/Sb 2 WO 6 nano-composite. The later offers improved photocatalytic efficiency owing to reduced electron-hole recombination ensured through the intimate interfacial contact ascribed to the modified synthesis strategy. The most efficient of h-BN and Sb 2 WO 6 compositions (12-wt % h-BN/Sb 2 WO 6) depicted an 80.8 % photo-catalytic degradation of Rhodamine B (RhB) in 90 min under visible light irradiation compared to 42 % for pure Sb 2 WO 6. The photocatalytic degradation of RhB exhibits k app value of 1.73 × 10 À 2 min À 1 which is 2.8 times greater than k app values of pristine Sb 2 WO 6 (6.01 × 10 À 3 min À 1). The radical scavenger tests reveal that the superoxide radicals (* O 2 À 1) and holes (h +) are the main reactive species. Additionally, composite catalyst revealed a commendable photostability with 77.29 % retention of photocatalytic efficiency after four catalytic cycles.

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Relieving the Photosensitivity of Organic Field‐Effect Transistors

Cited by 81 publications

References 42 publications

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

Enhanced Optical Switching Characteristics of Organic Phototransistor by Adopting Photo-Responsive Polymer in Hybrid Gate-Insulator Configuration

Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

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Relieving the Photosensitivity of Organic Field‐Effect Transistors

Cited by 81 publications

References 42 publications

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights

Enhanced Optical Switching Characteristics of Organic Phototransistor by Adopting Photo-Responsive Polymer in Hybrid Gate-Insulator Configuration

Optimized h‐BN/Sb2WO6 Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

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Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis