Remarkable Mobility Increase and Threshold Voltage Reduction in Organic Field‐Effect Transistors by Overlaying Discontinuous Nano‐Patches of Charge‐Transfer Doping Layer on Top of Semiconducting Film

Kim, Jong H.; Yun, Sun Woo; An, Byeong‐Kwan; Han, Yoon Deok; Yoon, Seong Jun; Joo, Jinsoo; Park, Soo Young

doi:10.1002/adma.201202789

Cited by 58 publications

(52 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Notably, trap filling may be advantageous for OTFT applications where a conductive film is not desired and where trap filling by a dopant has been shown to enhance mobilities and permit control over the threshold voltage. 31–34 This attribute of DMBI dopants was exploited in another work, where it was found that TIPS-pentacene can be doped with o -MeO-DMBI to obtain high-mobility n-channel transistors without increasing the bulk conductivity, as is commonly observed when doping organic transistors. 35 …”

Section: Discussionmentioning

confidence: 96%

Mechanistic Study on the Solution-Phase n-Doping of 1,3-Dimethyl-2-aryl-2,3-dihydro-1H-benzoimidazole Derivatives

et al. 2013

View full text Add to dashboard Cite

The discovery of air-stable n-dopants for organic semiconductor materials has been hindered by the necessity of high-energy HOMOs and the air sensitivity of compounds that satisfy this requirement. One strategy for circumventing this problem is to utilize stable precursor molecules that form the active doping complex in situ during the doping process or in a postdeposition thermal- or photo-activation step. Some of us have reported on the use of 1H-benzimidazole (DMBI) and benzimidazolium (DMBI-I) salts as solution- and vacuum-processable n-type dopant precursors, respectively. It was initially suggested that DMBI dopants function as single-electron radical donors wherein the active doping species, the imidazoline radical, is generated in a postdeposition thermal annealing step. Herein we report the results of extensive mechanistic studies on DMBI-doped fullerenes, the results of which suggest a more complicated doping mechanism is operative. Specifically, a reaction between the dopant and host that begins with either hydride or hydrogen atom transfer and which ultimately leads to the formation of host radical anions is responsible for the doping effect. The results of this research will be useful for identifying applications of current organic n-doping technology and will drive the design of next-generation n-type dopants that are air stable and capable of doping low-electron-affinity host materials in organic devices.

show abstract

Section: Discussionmentioning

confidence: 96%

Mechanistic Study on the Solution-Phase n-Doping of 1,3-Dimethyl-2-aryl-2,3-dihydro-1H-benzoimidazole Derivatives

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Discontinuous rubrene patchessuch as nanoislands-can be effective doping system for the MoS 2 layer to improve the transistor characteristics. A previous study also showed how transistor performance could be optimized using organic nanopatches [28].…”

Section: Comparative I-v Characteristics Of the Pristine And Hybrid Mmentioning

confidence: 96%

“…1(d)). This process induced extra free electrons at the conduction band edge of MoS 2 , and thus the activation energy in the MoS 2 channel could be reduced [28]. In previous reports for molybdenum dithiolene complexes with a p-type organic material dopant, the formation of a narrow depletion region in the channel material by charge doping induced a variation in the charge transport properties [29,30].…”

Section: Comparative I-v Characteristics Of the Pristine And Hybrid Mmentioning

confidence: 98%

Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

et al. 2014

Self Cite

View full text Add to dashboard Cite

Multilayer MoS 2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS 2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements.

show abstract

“…Molecular doping, where additional charge carriers are generated from the employed dopant materials, is one of the easiest ways to change the charge carrier densities14151617. Interface engineering at the organic semiconductor–gate insulator is another efficient method for controlling the charge carrier densities.…”

mentioning

confidence: 99%

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors

Roh

Lee

Kang

et al. 2017

Sci Rep

View full text Add to dashboard Cite

We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.

show abstract

Remarkable Mobility Increase and Threshold Voltage Reduction in Organic Field‐Effect Transistors by Overlaying Discontinuous Nano‐Patches of Charge‐Transfer Doping Layer on Top of Semiconducting Film

Cited by 58 publications

References 44 publications

Mechanistic Study on the Solution-Phase n-Doping of 1,3-Dimethyl-2-aryl-2,3-dihydro-1H-benzoimidazole Derivatives

Mechanistic Study on the Solution-Phase n-Doping of 1,3-Dimethyl-2-aryl-2,3-dihydro-1H-benzoimidazole Derivatives

Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors

Contact Info

Product

Resources

About