1995
DOI: 10.1051/jphyscol:1995570
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Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates

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Cited by 3 publications
(4 citation statements)
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“…The peaks of C 2 species at the wavelengths of 473.2 nm and 516.5 nm clearly appear after sublimation of the C 60 fullerene in the plasma. The same wavelengths for existing C 2 species in a plasma have been reported by other researches [27][28][29].…”
Section: Deposition Mechanismsupporting
confidence: 66%
“…The peaks of C 2 species at the wavelengths of 473.2 nm and 516.5 nm clearly appear after sublimation of the C 60 fullerene in the plasma. The same wavelengths for existing C 2 species in a plasma have been reported by other researches [27][28][29].…”
Section: Deposition Mechanismsupporting
confidence: 66%
“…Optical emission spectroscopy (OES) has found widespread use as a relatively straightforward and easy-to-implement probe of DC arc-jet and microwave (MW) plasmas used for the chemical vapor deposition (CVD) of diamond. Species amenable to study in this way in traditional dilute carbon/hydrogen (C/H) plasmas include electronically excited H atoms (via the Balmer emissions), H 2 molecules (typically via lines within the Fulcher system), and CH and C 2 radicals.…”
Section: Introductionmentioning
confidence: 99%
“…To this list can be added electronically excited Ar atoms (when Ar is added to the process gas mixture), ,, ,,, ,,,, , , ,,,,, B and BH (if a B-containing dopant is added), ,, CN and N 2 (when N 2 is present, either by design or as an impurity), ,,,, ,,,, and OH and CO (when, for example, CO 2 is used as the carbon source). ,,,,,, The emitting species are generally formed by electron impact excitation (EIE) either of the corresponding ground-state species, or of a low-lying excited state in the case of C 2 . Thus, the emission intensities are sensitive not just to the respective lower state populations but also to the electron temperature, T e , and number density, n e , and the variation of all of these quantities with changes in process conditions, e.g., in the gas composition and mixing ratio, total pressure p , applied MW power P , sign and magnitude of any substrate bias voltage, etc., ,,− , , ,,, ,, …”
Section: Introductionmentioning
confidence: 99%
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