Remote microwave plasma-enhanced chemical vapor deposition of amorphous carbon on silicon and titanium alloy substrates

Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates

“…1) used for this study is derived from a reactor developed at the LET1 (microelectronic division of the "Commissariat a I'Energie Atomique" in Grenoble, France) for microelectronic wafers. It has been described in more details elsewhere [8]. Before the deposition, the reactor is evacuated with a turbomolecular pump to a pressure of 10-4 Pa. During deposition, the pressure is around 10-80 Pa.…”