Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma

Kim, Byunguk; Lee, Namgue; Lee, Junghoon; Park, Taehun; Park, Hyun-Woo; Kim, Youngjoon; Jin, Changhyun; Lee, Dahyun; Kim, Hohoon; Jeon, Hyeongtag

doi:10.1016/j.apsusc.2020.148482

Cited by 20 publications

(6 citation statements)

References 25 publications

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“…The high performance of TiN as a plasmonic material has been recently exploited for variety of applications, including plasmonic waveguides on sapphire, [48] nanohole metasurfaces on sapphire, [49] nanoantennas on sapphire, MgO and Si substrates, [37,50,51] and cancer treatment. [52] High-quality TiN is generally grown via reactive sputtering, [30,37,39,42,53,54] PLD, [43,55] molecular-beam epitaxy (MBE), [38,56] and ALD [41,51,[57][58][59][60][61][62][63][64][65][66][67][68] techniques. Unfortunately, preparation of high-quality TiN usually requires high deposition or postdeposition annealing temperatures that are not compatible with CMOS processes.…”

Section: Tin Thin Filmsmentioning

confidence: 99%

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Izyumskaya

Fomra

Ding

et al. 2021

Physica Rapid Research Ltrs

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Electromagnetic radiation when coupled to collective oscillations of free electrons, dubbed as plasmonics, makes it possible to manipulate light at dimensions well below the diffraction limit and substantially enhances light–matter interaction. Plasmonics has already enabled many novel technologies with a wide variety of application in chemical and biosensing, medical treatments, nonlinear and quantum optics, metamaterials, optical nanotweezers, nanolasers, solar cells, light‐emitting diodes, and telecommunications. Coating the well‐established semiconductor circuitry with metals, such as Au and Ag, imparts the stack with much coveted plasmonic properties, but the metals suffer from high dissipative losses, limited optical tunability, and poor mechanical, chemical, and thermal stabilities, which render them undesirable. Emerging alternative plasmonic materials, such as TiN and ZnO:Al, overcome these limitations and offer wide tunability of their electrical and optical properties. Among a wide range of techniques used for the preparation of TiN and ZnO:Al thin films, atomic layer deposition (ALD) offers advantages such as conformity, scalability, and low growth temperature, which makes this technique the most suitable for the integration of plasmonics with the complementary metal–oxide–semiconductor (CMOS) electronics. Herein, a brief review of recent advances in ALD‐grown TiN and ZnO:Al thin films as pertained to plasmonic applications is given.

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Section: Tin Thin Filmsmentioning

confidence: 99%

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Izyumskaya

Fomra

Ding

et al. 2021

Physica Rapid Research Ltrs

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“…11,12 In the ALD process, thin film can be deposited at a lower temperature compared to the CVD (chemical vapor deposition) process, and is excellent in many aspects such as uniformity of thin film and step coverage. [13][14][15] Therefore ALD is being studied as a next-generation deposition process. TiO 2 thin films have two crystalline structures, anatase and rutile crystal structures, which have a relatively high k value greater than 20.…”

mentioning

confidence: 99%

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Kim

Choi

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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We researched the reduction of leakage current by Al doping in TiO 2 thin film. During the TiO 2 thin film deposition process, Al 2 O 3 thin film deposition was used for Al doping. XPS analysis showed that the greater the amount of Al doping in TiO 2 thin film, the fewer oxygen vacancies were found. The n-type characteristic of TiO 2 thin films is reduced as oxygen vacancies are reduced. An anatase (211) peak was detected by GIXRD analysis, and crystallinity was reduced with greater Al doping; the full width half maximum showed the crystalline size was reduced. UV-visible analysis showed the energy bandgap increased as the crystalline size became smaller, and I-V measurements showed the current density decreased to 3 × 10 −4 A cm −2 (As-dep TiO 2 : 10 −1 A cm −2 ) with Al doping. The dielectric constant remained above 20 even when doped with Al, confirming the superior properties of Al-doping TiO 2 thin film over conventional TiO 2 thin films.

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“…The ALD process can deposit thin films at low temperatures compared to a CVD (chemical vapor deposition) process. The ALD process is also widely used because it can deposit excellent thin films in various aspects, such as in terms of uniformity and impurity [12][13][14][15]. In general, most researchers use the halide precursor TiCl 4 or TiI 4 to deposit rutile-TiO 2 thin film [16,17].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition for rutile structure TiO₂ thin films using a SnO₂ seed layer and low temperature heat treatment

Kim¹,

Choi²,

Lee³

et al. 2021

Nanotechnology

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We study the rutile-TiO2 film deposition with a high-k value using a SnO2 seed layer and a low temperature heat treatment. Generally, heat treatment over 600 ℃ is required to obtain the rutile-TiO2 film. However, By using a SnO2 seed layer, we obtained rutile-TiO2 films with heat treatments as low as 400 ℃. The XPS analysis confirms that the SnO2 and TiO2 film were deposited. The XRD analysis showed that a heat treatment at 400 ℃ after depositing the SnO2 and TiO2 films was effective in obtaining the rutile-TiO2 film when the SnO2 film was thicker than 10nm. The TEM / EDX analysis show that no diffusion in the thin film between TiO2 and SnO2. The dielectric constant of the TiO2 film deposited on the SnO2 film (20 nm) was 68, which was more than twice as high as anatase TiO2 dielectric constant. The current density was 10-4A/cm2 at 0.7 V and this value confirmed that the leakage current was not affected by the SnO2 seed layer.

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Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma

Cited by 20 publications

References 25 publications

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Atomic layer deposition for rutile structure TiO₂ thin films using a SnO₂ seed layer and low temperature heat treatment

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Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma

Cited by 20 publications

References 25 publications

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO2Thin Film for Dielectric in DRAM Capacitor

Atomic layer deposition for rutile structure TiO2 thin films using a SnO2 seed layer and low temperature heat treatment

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Product

Resources

About

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Atomic layer deposition for rutile structure TiO₂ thin films using a SnO₂ seed layer and low temperature heat treatment