Removal of hydrogen from 1 × 1 dihydride passivated Si(100) by low-energy rare gas ions: implications for RPCVD

Tesauro, Mark R.; Banerjee, Sanjay K.; Campion, Alan

doi:10.1016/0039-6028(94)90333-6

Cited by 4 publications

(4 citation statements)

References 10 publications

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“…Stimulated desorption of hydrogen from dihydride passivated silicon (100) 1×1 has also been observed using ion bombardment. 200 eV Ar + and He + were found to desorb hydrogen with cross sections of 3.4 × 10 –17 cm 2 and 2.7 × 10 –17 cm 2 , respectively . However, removal of hydrogen from the surface was not observed with 1 keV H 2 + or 500 eV H + beams that were utilized with Si(111)-H …”

Section: Dangling Bondsmentioning

confidence: 98%

“…200 eV Ar + and He + were found to desorb hydrogen with cross sections of 3.4 × 10 −17 cm 2 and 2.7 × 10 −17 cm 2 , respectively. 170 However, removal of hydrogen from the surface was not observed with 1 keV H 2 + or 500 eV H + beams that were utilized with Si(111)-H. 171 Desorption of hydrogen from silicon has also been observed with photon irradiation. Pusel et al compared irradiation desorption between a F 2 laser (7.9 eV) and a XeCl laser (4.0 eV).…”

Section: Silicon Surfaces and Imagingmentioning

confidence: 99%

“…200 eV Ar + and He + were found to desorb hydrogen with cross sections of 3.4 × 10 –17 cm 2 and 2.7 × 10 –17 cm 2 , respectively. 169 However, removal of hydrogen from the surface was not observed with 1 keV H 2 + or 500 eV H + beams that were utilized with Si(111)-H. 170 …”

Section: Dangling Bondsmentioning

confidence: 99%

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Atomically Precise Manufacturing of Silicon Electronics

Pitters,

Croshaw,

Achal

et al. 2024

ACS Nano

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Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

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Section: Dangling Bondsmentioning

confidence: 98%

Section: Silicon Surfaces and Imagingmentioning

confidence: 99%

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Atomically Precise Manufacturing of Silicon Electronics

Pitters,

Croshaw,

Achal

et al. 2024

ACS Nano

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“…As previously shown, these sputtering yields can be combined with the estimated ion fluxes in the RPCVD environment (ca. 1015 Ar'/cm2s) to conclude that approximately active sites are created per second under growth conditions [9]. If the generation of active sites is ratelimiting then growth rates on the order of ]&min.…”

Section: Methodsmentioning

confidence: 99%

Removal of hydrogen from 2H::Si(100) by sputtering and recoil implantation

Tesauro¹,

Underwood²,

Lowell³

et al.

Proceedings of 11th International Conference on Ion Implantation Technology

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In order to explore more completely the role of plasma ions in the epitaxial growth of silicon thin films by Remote Plasma Chemical Vapor Deposition (RPCVD), the energy dependent, absolute cross sections for the removal of hydrogen from the 2H::Si(100) surface by 100-200 eV Ar' and He+ ions have been obtained. The measured integrated cross sections, on the order of 1 x lo-" cm2, demonstrate that Ar' is more effective than He+ in the sputter removal of surface hydrogen. Recoil implantation removal of surface hydrogen could not be measured in the experiments, and was estimated by modeling. The modeling suggests that recoil implantation removal is of increasing importance at lower ion energies, and is larger for Ar+ bombardment than for He+. These results support the hypothesis that the generation of active sites through the removal of hydrogen from the passivated surface is an important step in the growth mechanism for RPCVD silicon epitaxy. They also explain the greater efficacy of Ar plasmas in RPCVD.

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