1979
DOI: 10.1149/1.2129162
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Removal of Photoresist Film Residues from Wafer Surfaces

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Cited by 20 publications
(11 citation statements)
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“…After ten rinsings in distilled water, the inorganic contaminations on substrates were removed by washing for 5 min at 80°C in 6:1:1 parts of distilled water, hydrogen peroxide (30% v/v), and hydrochloric acid (37% v/v). This yielded a thin hydrated surface layer of SiO 2 33, 34 (water/surface static contact angle, θ w , <10°, when measured with a Ramé‐Hart NRL Model 100 goniometer, USA).…”
Section: Methodsmentioning
confidence: 99%
“…After ten rinsings in distilled water, the inorganic contaminations on substrates were removed by washing for 5 min at 80°C in 6:1:1 parts of distilled water, hydrogen peroxide (30% v/v), and hydrochloric acid (37% v/v). This yielded a thin hydrated surface layer of SiO 2 33, 34 (water/surface static contact angle, θ w , <10°, when measured with a Ramé‐Hart NRL Model 100 goniometer, USA).…”
Section: Methodsmentioning
confidence: 99%
“…Silicon wafers (Okmetic LMTD, Esbo, Finland) cleaved into 5 × 10‐mm pieces in the (100) crystal direction, 76 × 26 mm Microscope Slides (Menzel‐Gläser, Braunschweig, Germany, 72.2% SiO 2 ) or 40 × 8 mm glass test tubes (Assistent KHG, Sondheim‐Rhön, Germany, approximately 75% SiO 2 ) were cleaned for 5 min at 80°C in distilled (Milli‐Q) water, hydrogen peroxide (30% v/v) and NH 4 OH (25% v/v), 5 : 1 : 1 parts respectively 28, 29. The surfaces were then rinsed ten times in distilled water and incubated for another 5 min at 80°C in distilled water, hydrogen peroxide, and hydrochloric acid (37% v/v), 6 : 1 : 1 parts, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Thereafter, the wafers were "boiled" for 5 minutes at 80°C in six parts of distilled water, one part of hydrogen peroxide (30% v/v) and one part of hydrochloric acid (37% v/v), resulting in a thin hydrated surface layer of SiO 2 [23,24]. The water/surface static contact angle (θ w ) was less than 10° (Ramé-Hart NRL Model 100 goniometer, USA).…”
Section: Hydrophobic Surfacesmentioning
confidence: 99%