2022
DOI: 10.21883/tpl.2022.14.55126.18893
|View full text |Cite
|
Sign up to set email alerts
|

Replacing tunnel junctions in InP with conduction channels with GaP crystallites

Abstract: The results of investigations by the method of Electron beam-induced current of p-n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n-junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra. Keywords: crystallites, tunnel junction, connecting e… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 9 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?