Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

Fenouillet-Béranger, C.; Skotnicki, T.; Monfray, S.; Carriere, N.; Bœuf, F.

doi:10.1016/j.sse.2003.12.039

Cited by 59 publications

(16 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, one can easily create the NDT feature by changing the magnitude of |V G | because the gate driving force is very strong in the UTB-based MOS stack ( i.e ., explicit control of the accumulation-depletion-inversion modes by |V G | in the UTB-channel MOSFETs) 44 , 45 . For example, when applying a negative gate voltage ( i.e ., V G2 < 0), I D will start to increase because −|V G2 | reduces the electron concentration at the channel and eventually gives rise to the increase in diffusion/drift currents through the source-channel-drain (Fig.…”

Section: Resultsmentioning

confidence: 99%

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Lee

Kim

2017

Sci Rep

View full text Add to dashboard Cite

High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.

show abstract

Section: Resultsmentioning

confidence: 99%

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Lee

Kim

2017

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The device is remarkably symmetric, compared to previously published work [5], possibly due to compensation of the unintentional doping of the Ge layer. The 'oN/AI'oFF ratio is about 100, which is comparable to [5] and other ultra-thin SOI transistors [6].…”

Section: Standard Transistor Characteristicssupporting

confidence: 50%

Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs

Kazazis¹,

Zaslavsky²,

Tutuc³

et al.

2006 International SiGe Technology and Device Meeting

View full text Add to dashboard Cite

“…The I on / I off ratio is not as large as the best device in Fig. 1, but still comparable to ultrathin SOI transistors 8,9 and bulk Ge FETs. 1 Significantly, this device is clearly ambipolar, with P-channel and N-channel operations available in the same structure as a function of V GS .…”

mentioning

confidence: 65%

Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors

Preisler¹,

Guha²,

Perkins

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

Ultrathin films of single crystal Ge ͑100 Å or less͒ have been grown epitaxially on a lattice matched high-crystalline oxide, lanthanum-yttrium-oxide, in turn grown on Si. Back-gated germanium-on-insulator field-effect transistors have been fabricated and measured from these germanium-on-insulator layers for Ge layers in the 30-600 Å range. The best devices exhibit an I on / I off ratio over 10 3 at room temperature and 10 5 at T = 77 K. These ultrathin devices can be fully depleted and inverted, enabling both p and n channel operation in the same device.

show abstract

Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

Cited by 59 publications

References 21 publications

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs

Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors

Contact Info

Product

Resources

About